Abstract
In this work, we report on the fabrication and characteristics of light-emitting diodes based on p-GaN/i-ZnO/n-ZnO heterojunction. A 30 nm i-ZnO layer was grown on p-GaN by rf reactive magnetron sputtering, then a n-ZnO was deposited by the electron beam evaporation technique. The current-voltage characteristic of the obtained p-i-n heterojunction exhibited a diode-like rectifying behavior. Because the electrons from n-ZnO and the holes from p-GaN could be injected into a i-ZnO layer with a relatively low carrier concentration and mobility, the radiative recombination was mainly confined in i-ZnO region. As a result, an ultraviolet electro-emission at 3.21 eV, related to ZnO exciton recombination, was observed in a room-temperature electroluminescence spectrum of p-i-n heterojunction under forward bias.
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Xu, H.Y., Liu, Y.C., Liu, Y.X. et al. Ultraviolet electroluminescence from p-GaN/i-ZnO/n-ZnO heterojunction light-emitting diodes. Appl. Phys. B 80, 871–874 (2005). https://doi.org/10.1007/s00340-005-1790-9
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DOI: https://doi.org/10.1007/s00340-005-1790-9