Abstract.
The technique of combined optical second-harmonic (SH) intensity and phase spectroscopy, which is the spectroscopic modification of SH phase measurements, is proposed to study the nonlinear optical response of semiconductor interfaces with spectrally close resonant contributions. The spectral dependences of SH intensity and phase from oxidised Si (111) and Ge (111) surfaces are studied in the range of 3.5- to 5-eV SH photon energy. The resonant behaviour of combined SH spectra is associated with a superposition of contributions from direct interband transitions at several critical points of Si and Ge band structures.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
Author information
Authors and Affiliations
Additional information
Received: 16 October 2001 / Revised version: 16 April 2002 / Published online: 6 June 2002
Rights and permissions
About this article
Cite this article
Dolgova, T., Schuhmacher, D., Marowsky, G. et al. Second-harmonic interferometric spectroscopy of buried interfaces of column IV semiconductors . Appl Phys B 74, 653–659 (2002). https://doi.org/10.1007/s00340-002-0917-5
Published:
Issue Date:
DOI: https://doi.org/10.1007/s00340-002-0917-5