Abstract
Room temperature irradiation effect of GaAs compound semiconductor by 100 keV Ar+ ions has been systematically studied by means of transmission electron microscopy. The dose dependenceoof the Ar+ ion irradiation and room temperature annealing effects have been investigated. The experimental results show that the structure of GaAs transforms from perfect crystalline through weakly and severely damaged crystalline to amorphous states with the increase of the irradiation dose and the damaged states are changed during room temperature annealing.
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Yang Xiangxiu: born in 1968, Doctor
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Xiangxiu, Y., Renhui, W., Heping, Y. et al. Transmission electron microscopy investigation of the Ar+ ion irradiation effect in semiconductor GaAs. Wuhan Univ. J. Nat. Sci. 3, 35–40 (1998). https://doi.org/10.1007/BF02827510
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DOI: https://doi.org/10.1007/BF02827510