Abstract
135 nsec pulses ofλ = 1.06μm light from a Nd: YAG laser have been used to form Schottky barriers by irradiation of a 500Å thick metal film on n-type silicon. Large area barriers were fabricated by over-lapping individual 30μ diameter laser pulses of from 4 to 12 J/cm2. The barrier height was 0.73 ± 0.03 V, independent of the laser power. The barrier quality, as assessed by measurement of the forward current characteristic, decreased with laser power to a value of n = 1.5 at 12 J/cm2.
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Doherty, C.J., Crider, C.A., Leamy, H.J. et al. Laser formation of Pt-Si Schottky barriers on silicon. J. Electron. Mater. 9, 453–458 (1980). https://doi.org/10.1007/BF02670861
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DOI: https://doi.org/10.1007/BF02670861