Abstract
A simple kinetic model for the metallorganic chemical vapor deposition (MOCVD) growth of binary epilayers, denoted byAB, is presented. The model yields the growth rate as a function of the gas-phase concentrations of the constituents, in various limiting cases. The model is corroborated with experimental results obtained by the MOCVD growth of CdTe at 480° C. The transition temperature between the surface-reaction and the gasphase mass-transfer control region is shifted to higher temperature with reduced reactor pressure and increased total flow velocity.
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II–VI Incorporated, U.S.A.
Thomas Swan, Co. England.
Alfa Products, U.S.A.
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Amir, N., Goren, D., Fekete, D. et al. A model for high temperature growth of CdTe by metal organic chemical vapor deposition. J. Electron. Mater. 20, 227–230 (1991). https://doi.org/10.1007/BF02651897
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DOI: https://doi.org/10.1007/BF02651897