Abstract
The main problem of the epitaxial growth of thick AlN layers on a Si substrate consists in the formation of cracks, which complicates the application of structures of this kind in the fabrication of semiconductor devices. The possibility of obtaining crack-free AlN layers with a thickness exceeding 1 μm and a mirror- smooth surface by hydride vapor-phase epitaxy is demonstrated. The properties of the layers are studied by X-diffraction analysis, optical and scanning electron microscopy, and Raman spectroscopy.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
S. Raghavan and J. Redwing, J. Appl. Phys. 96, 2995 (2004).
M. A. Mastro, C. R. Eddy, D. K. Gaskill, N. D. Bassim, J. Casey, A. Rosenberg, R. T. Holm, R. L. Henry, and M. E. Twigg, J. Cryst. Growth 287, 610 (2006).
V. N. Bessolov, V. Yu. Davydov, Yu. V. Zhilyaev, E. V. Konenkova, G. N. Mosina, S. D. Raevski, S. N. Rodin, Sh. Sh. Sharofidinov, M. P. Shcheglov, Hee Seok Park, and M. Koike, Tech. Phys. Lett. 31, 915 (2005).
A. Dadgar, T. Hempel, J. Bläsing, O. Schulz, S. Fritze, J. Christen, and A. Krost, Phys. Status Solidi C 8, 1503 (2011).
Y. Feng, H. Wei, S. Yang, Z. Chen, L. Wang, S. Kong, G. Zhao, and X. Liu, Sci. Rep. 4, 6416 (2014).
X. Wang, H. Li, J. Wang, and L. Xiao, Electron. Mater. Lett. 10, 1069 (2014).
Sh. Sh. Sharofidinov, A. A. Golovatenko, I. P. Nikitina, N. V. Seredova, M. G. Mynbaeva, V. E. Bougrov, M. A. Odnoblyudov, S. I. Stepanov, and V. I. Nikolaev, Fiz. Mekh. Mater. 22 (1), 53 (2015).
M. Ali, A. E. Romanov, S. Suihkonen, O. Svensk, P. T. Torma, M. Sopanen, H. Lipsanen, M. A. Odnoblyudov, and V. E. Bougrov, J. Cryst. Growth 315, 188 (2011).
J. Komiyama, K. Eriguchi, Y. Abe, S. Suzuki, H. Nakanishi, T. Yamane, H. Murakami, and A. Koukitu, J. Cryst. Growth 310, 96 (2008).
V. N. Bessolov, Yu. V. Zhilyaev, E. V. Konenkova, L. M. Sorokin, N. A. Feoktistov, Sh. Sh. Sharofidinov, M. P. Shcheglov, S. A. Kukushkin, L. I. Mets, and A. V. Osipov, J. Opt. Technol. 78, 435 (2011).
C. A. Arguello, D. L. Rousseau, and S. P. S. Porto, Phys. Rev. 181, 1351 (1969).
V. Yu. Davydov, Yu. E. Kitaev, I. N. Goncharuk, A. N. Smirnov, J. Graul, O. Semchinova, D. Uffmann, M. B. Smirnov, A. P. Mirgorodsky, and R. A. Evarestov, Phys. Rev. B 58, 12899 (1998).
T. Prokofyeva, M. Seon, J. Vanbuskirk, M. Holtz, S. A. Nikishin, N. N. Faleev, H. Temkin, and S. Zollner, Phys. Rev. 63, 125313 (2001).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © Sh.Sh. Sharofidinov, V.I. Nikolaev, A.N. Smirnov, A.V. Chikiryaka, I.P. Nikitina, M.A. Odnoblyudov, V.E. Bugrov, A.E. Romanov, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 4, pp. 549–552.
Rights and permissions
About this article
Cite this article
Sharofidinov, S.S., Nikolaev, V.I., Smirnov, A.N. et al. On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy. Semiconductors 50, 541–544 (2016). https://doi.org/10.1134/S1063782616040217
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782616040217