Abstract
The temperature dependence of the charge carrier concentration and mobility in n-type GaAs monocrystals doped jointly by Ge and isovalent In and Sb impurities is investigated. The observable charge carrier concentration and mobility changes in the GaAs:Ge:In and GaAs:Ge:Sb are compared with the corresponding characteristics in GaAs:Ge, and the change in properties along the ingots can be explained by the Ge impurity redistribution in the gallium and arsenic sublattices in the presence of an isovalent impurity.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 3–8, September, 1987.
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Krivov, M.A., Malisova, E.V., Nikiforova, M.P. et al. Electrophysical properties of gallium arsenide in combination with impurity-doped germanium and isovalent indium and antimony impurities. Soviet Physics Journal 30, 721–725 (1987). https://doi.org/10.1007/BF00897466
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DOI: https://doi.org/10.1007/BF00897466