Abstract
Thin films of amorphous silicon with nanocrystalline silicon inclusions are fabricated using a dual plasma PECVD co-deposition system. Raman spectroscopy and X-ray diffraction confirmed the crystallinity of the embedded nanocrystals as well as their diameter, which is varied from 4.3 nm to 17.5 nm. The dark conductivity of the films is highly dependent on the crystal fraction, with a maximum room temperature conductivity found for a crystal concentration of 5.5%, well below the percolation threshold. Proton irradiation at energies of 217 MeV with a total fluence of 5 x1012 protons/cm2 caused no significant radiation damage. The enhancement of the conductivity, along with the absence of radiation damage suggests this material may be a candidate for use in the next generation of particle detectors in the Compact Muon Solenoid in the Large Hadron Collider at CERN.
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References
The RD50 Collaboration (M. Moll et. al.), Nucl. Instrum. Methods Phys. Res. A, 546, 99 (2005).
The RD50 Collaboration (E. Fretwurst, et. al.) Nucl. Instrum. Methods Phys. Res. A 552, 7 (2005).
G. Anelli, S. C. Commichau, M. Despeisse, G. Dissertori, P. Jarron, C. Miazza, D. Moraes, A. Shah, G. M. Viertel and N. Wyrsch, Nucl. Instrum. Methods Phys. Res. A 518, 366 (2004); M. Despeisse, G. Anelli, P. Jarron, J. Kaplon, D. Moraes, A. Nardulli, F. Powolny and N. Wyrsch, IEEE Trans. Nuclear Sci., 55, 802 (2008).
N. Kishimoto, H. Amekura, K. Kono and C. G. Lee, J. Nucl. Matter. 258–263, 1908 (1998).
V. Perez-Mendez, S. N. Kaplan, G. Cho, I. Fujieda, S. Qureshi, W. Ward and R. A. Street, Nucl. Instrum. Methods Phys. Res. A, 273, 127 (1988).
J. Kakalios, U. Kortshagen, C. Blackwell, C. Anderson, Y. Adjallah, L.R. Wienkes, K. Bodurtha, and J. Trask in Amorphous and Polycrystalline Thin-Film Silicon Science and Technology (Mater. Res. Soc. Symp. Proc. 1321, Pittsburg, PA, (2011); L. R. Wienkes, C. Blackwell and J. Kakalios, Appl. Phys. Lett. 100, 72105 (2012).
Y. Adjallah, C. Anderson, U. Kortshagen, J. Kakalios. J. Appl. Phys. 107, 043704 (2010)
J.D. Fields, S. McMurray, L.R. Wienkes, J. Trask, C. Anderson, L. Miller, B.J. Simonds, J. Kakalios, U. Kortshagen, M.T. Lusk, R.T. Collins, and P.C. Taylor, Solar Energy Materials & Solar Cells 129, 7 (2014).
L. Mangolini, E. Thimsen, U. Kortshagen. Nano Letters 5(4), (2005).
U. Kortshagen. J. Appl. Phys. D 42 (2009) 113001.
L. Mangolini, J. Vac. Sci. Technol. B 31, 20801 (2013).
R.A Street. Hydrogenated Amorphous Silicon (Cambridge University Press, 1991).
R. Anthony and U.R. Kortshagen, Phys. Rev. B. 80, 115407 (2009).
E. Lifshin and I. Ebrary, X-Ray Characterization of Materials (Wiley-VCH; New York, 1999).
D.Acosta (editor), CMS Physics Technical Design Report Volume I (CERN/LHCC 2006-001, 2006). Retrieved from https://cds.cern.ch/record/922757/files/lhcc-2006-001.pdf. P.51.
J. Kuendig, M. Goetz, A. Shah, L. Gerlach and E. Fernandez, Solar Energy Materials and Solar Cells 79, 425 (2003).
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Razieli, Z., Rusack, R. & Kakalios, J. Composite Nanocrystalline/Amorphous Thin Films for Particle Detector Applications. MRS Online Proceedings Library 1770, 49–54 (2015). https://doi.org/10.1557/opl.2015.829
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DOI: https://doi.org/10.1557/opl.2015.829