Abstract
Integrating oxide heterostructures on silicon has the potential to leverage the multifunctionalities of oxide systems into semiconductor device technology. We present the growth and characterization of two-dimensional electron gas (2DEG) oxide systems LaTiO3/SrTiO3 (LTO/STO) and GdTiO3/SrTiO3 (GTO/STO) on Si(001). We show interface-based conductivity in the oxide films and measure high electron densities ranging from ~9 x 1013 cm-2 interface-1 in GTO/STO/Si to ~9 x 1014 cm-2 interface-1 in LTO/STO/Si. We attribute the higher measured carrier density in the LTO/STO films to a higher concentration of interface-bound oxygen vacancies arising from a lower oxygen partial pressure during growth. These vacancies donate conduction electrons and result in an increased measured carrier density. The integration of such 2DEG oxide systems with silicon provides a bridge between the diverse electronic properties of oxide systems and the established semiconductor platform and points toward new devices and functionalities.
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Eric N. Jin and Lior Kornblum contributed equally to this work.
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Jin, E.N., Kornblum, L., Ahn, C.H. et al. Integrating 2D electron gas oxide heterostructures on silicon using rare-earth titanates. MRS Advances 1, 287–292 (2016). https://doi.org/10.1557/adv.2016.95
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DOI: https://doi.org/10.1557/adv.2016.95