Abstract
High-aspect-ratio (HAR) silicon etching of micro-and nanostructures in a time-multiplexed deep etching process (Bosch process) is reviewed, including applications, different technological methods, critical challenges, and main principles of the technologies. HAR silicon etching is an application associated primarily with micro- and nanostructures. This potentially large-scale application requires HAR etching with a high throughput and controllable profile and surface properties. The most significant effects like RIE lag, bowing, stop effect, and profile shape dependence are discussed.
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Original Russian Text © I.I. Amirov, 2013, published in Rossiiskii Khimicheskii Zhurnal, 2013, Vol. 57, Nos. 3–4, pp. 44–51.
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Amirov, I.I. Plasma chemical etching of high-aspect-ratio silicon micro- and nanostructures. Russ J Gen Chem 85, 1252–1259 (2015). https://doi.org/10.1134/S1070363215050424
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DOI: https://doi.org/10.1134/S1070363215050424