Abstract
We have experimentally studied the dynamics of impact-ionization switching in semiconductor structures without p–n junctions when subnanosecond high-voltage pulses are applied. Silicon n+–n–n+ type structures and volume ZnSe samples with planar ohmic contacts exhibit reversible avalanche switching to the conducting state within about 200 ps, which resembles the well-known phenomenon of delayed avalanche breakdown in reverse-biased p+–n–n+ diode structures. Experimental data are compared to the results of numerical simulations.
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Original Russian Text © V.I. Brylevskiy, I.A. Smirnova, N.I. Podolska, Yu.A. Zharova, P.B. Rodin, I.V. Grekhov, 2018, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2018, Vol. 44, No. 4, pp. 66–73.
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Brylevskiy, V.I., Smirnova, I.A., Podolska, N.I. et al. Experimental Observation of Delayed Impact-Ionization Avalanche Breakdown in Semiconductor Structures without p–n Junctions. Tech. Phys. Lett. 44, 160–163 (2018). https://doi.org/10.1134/S1063785018020177
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DOI: https://doi.org/10.1134/S1063785018020177