Abstract
It is shown that an application of a fast-rising high-voltage pulse to an n +–n–n + silicon structure leads to subnanosecond avalanche breakdown, generation of electron–hole plasma throughout the entire structure, and structure switching to the conducting state in a time of about 100 ps. The predicted effect is similar to the delayed avalanche breakdown of reverse-biased p +–n–n + diode structures; however, it is implemented in a structure without p–n junctions.
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References
I. V. Grekhov and A. F. Kardo-Sysoev, Sov. Tech. Phys. Lett. 5, 395 (1979).
A. F. Kardo-Sysoev, in Ultra-Wideband Radar Technology, Ed. by J. D. Taylor (CRC, Boca Raton, London, New York, Washington, 2001).
M. Levinshtein, J. Kostamovaara, and S. Vainshtein, Breakdown Phenomena in Semiconductors and Semiconductor Devices (World Scientific, London, 2005).
R. J. Focia, E. Schamiloghu, C. B. Flederman, et al., IEEE Trans. Plasma Sci. 25, 138 (1997).
I. V. Grekhov, IEEE Trans. Plasma Sci. 38, 1118 (2010).
G. A. Mesyats, A. S. Nasibov, V. G. Shpak, S. A. Shunailov, and M. I. Yalandin, J. Exp. Theor. Phys. 106, 1013 (2008).
V. I. Brylevskiy, I. A. Smirnova, P. B. Rodin, and I. V. Grekhov, Tech. Phys. Lett. 40, 357 (2014)).
P. Rodin, A. Rodina, and I. Grekhov, J. Appl. Phys. 98, 094506 (2005).
www.silvaco.com.
M. Valdinoci, D. Ventura, M. C. Vecchi, et al., in Proceedings of the International Conference on Simulations of Semiconductor Processes and Devices SISPAD'99, Sept. 6–8, Kyoto, Japan, 1999, p. 27.
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Original Russian Text © N.I. Podolska, P.B. Rodin, 2017, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2017, Vol. 43, No. 11, pp. 55–62.
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Podolska, N.I., Rodin, P.B. Subnanosecond impact-ionization switching of silicon structures without p–n junctions. Tech. Phys. Lett. 43, 527–530 (2017). https://doi.org/10.1134/S1063785017060128
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DOI: https://doi.org/10.1134/S1063785017060128