Abstract
The properties of special grain boundaries in multicrystalline silicon (mc-Si) grown from metallurgical refined silicon by the Bridgman-Stockbarger method have been studied. The electric activity of grain boundaries was characterized by measuring the electron-beam-induced current. Structural features of the mc-Si samples were studied by scanning electron microscopy, electron-probe microanalysis, and atomic force microscopy techniques.
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Original Russian Text © S.M. Peshcherova, A.I. Nepomnyashchikh, L.A. Pavlova, 2014, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2014, Vol. 40, No. 22, pp. 30–36.
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Peshcherova, S.M., Nepomnyashchikh, A.I. & Pavlova, L.A. The electric activity of special grain boundaries in multicrystalline silicon grown from metallurgical refined silicon. Tech. Phys. Lett. 40, 1000–1002 (2014). https://doi.org/10.1134/S106378501411025X
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DOI: https://doi.org/10.1134/S106378501411025X