Abstract
The dependences of the longitudinal and Hall resistances on a magnetic field in n-InGaAs/GaAs heterostructures with a single and double quantum wells after infrared illumination are measured in the range of magnetic fields В = 0–16 T and temperatures T = 0.05–4.2 K. Analysis of the experimental results was carried out on a base of two-parameter scaling hypothesis for the integer quantum Hall effect. The value of the second (irrelevant) critical exponent of the theory of two-parameter scaling was estimated.
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Arapov, Y.G., Gudina, S.V., Klepikova, A.S. et al. The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures n-InGaAs/GaAs after IR-illumination. Semiconductors 51, 272–278 (2017). https://doi.org/10.1134/S1063782617020026
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DOI: https://doi.org/10.1134/S1063782617020026