Abstract
Constructing a semiconducting channel and electrodes using an identical material is a reliable method to fabricate low-cost, high-performance transistors. Wide-bandgap metal oxide semiconductors (MOSs) have been widely applied in various circuits. However, it is still a challenge to make low-cost transistors with a channel and electrodes based on identical MOSs. Here, we applied an electrospinning technique coupled with a nanowire transfer technique to fabricate high-performance, electrical-biased transistors with a one-dimensional indium tin oxide (ITO) nanowire, used as the semiconducting channel and the conducting source/drain (S/D) electrodes. The transition from a regular-conducting ITO to the newly-designed semiconducting ITO was achieved by tuning the needle diameter of the electrospinning nozzle. This method can be extended to the construction of future flexible and transparent transistors with both a channel and S/D electrodes.
摘要
金属氧化物半导体(MOSs)由于具有优异的光电学性能和稳定性, 在场效应晶体管(FETs)中具有广泛的研究价值. 然而, 以相同的MOSs材料作为FETs的沟道和源漏电极仍存在较大挑战. 本文采用静电纺丝工艺和纳米线转移技术, 以一维氧化铟锡(ITO)为主体, 构筑了低成本高性能全纳米线FETs. 通过简单调节纳米线的直径, ITO实现了由导体向半导体的转变, 基于最佳的ITO纳米线作为沟道和电极材料组建的FETs获得了较大的开关比(106)和较低阈值电压(0.6 V). 此外, 基于全静电纺丝工艺制备的增强型和耗尽型ITO纳米线FETs实现了非门逻辑及n型MOS (NMOS)电路. 该方法为未来实现柔性透明光电子器件提供了可行方案.
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Acknowledgements
This work was financially supported by the Natural Science Foundation of Shandong Province, China (ZR2020QF104), and the Key Research and Development Program of Shandong Province, China (2019GGX102067).
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Author contributions Chen G performed the experiments and wrote the paper; Cong H, Chang Y and Zhang Y analyzed and discussed the data; Zhou R, Wang Y and Qin Y prepared and characterized the samples; Liu X and Wang F revised the paper. All authors have given approval to the final version of the manuscript.
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Guangshou Chen is currently a Master candidate at Qingdao University. His research interest focuses on low-dimensional field effect transistors and optical synapse devices.
Fengyun Wang received her PhD degree in materials physics & chemistry from the City University of Hong Kong in 2012, and later worked as a research fellow. In 2013, she joined Qingdao University as a professor. Her research program aims to utilize chemistry, physics, materials science, and various engineering disciplines to synthesize low-dimension metal oxide semiconductors, perovskites, and Mxenes, for bioelectronics, photonics, and energy storage devices.
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Chen, G., Cong, H., Chang, Y. et al. From conductor to semiconductor: Diameter tuning of electrospun ITO nanowire for low-cost electronics. Sci. China Mater. 66, 4445–4452 (2023). https://doi.org/10.1007/s40843-023-2596-1
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DOI: https://doi.org/10.1007/s40843-023-2596-1