Abstract
This paper examines the effects of temperature variation on Hetero Gate Oxide Dual Work Function Step Channel Tunnel Field-Effect Transistor (HGO-DW-SCTFET). For different temperatures, the proposed device performs better in comparison with conventional Step Channel Tunnel Field-Effect Transistor (SCTFET). This study includes a temperature-based analysis on DC and Analog parameters like drain current, threshold voltage (Vth), Sub-threshold Slope (SS), ION–IOFF ratio, trans-conductance, gate drain capacitance (Cgd), cut off frequency (fT), Trans-conductance-frequency product (TFP), Trans-conductance generation factor (TGF), Gain Bandwidth Product (GBP), Transit Time (TT) to analyze its performance at various temperatures and various models named BT-BT, SRH, and TAT, along with the linearity analysis, and the reliability of the device. The variation in DC and Analog parameters shows that the proposed device can be used for the applications of high temperature. To examine the performance of the device, a wide range of temperatures of 250K to 400K has been taken in the TCAD simulator.
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Acknowledgements
The authors would like to thank Dr. Dip Prakash Samajdar from Department of Electronics and Communication Engineering, PDPM Indian Institute of Information Technology, Design & Manufacturing, Jabalpur, Madhya Pradesh, India for providing valuable suggestions and support to carry out this research work.
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– Manshi Kamal: Conceptualization, data curation, formal analysis, methodology, investigation, writing – original draft.
– Dharmendra Singh Yadav: Supervision, validation, visualization, writing – review & editing
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Kamal, M., Yadav, D.S. Effects of Linearity and Reliability Analysis for HGO-DW-SCTFET with Temperature Variation for High Frequency Application. Silicon 14, 6379–6389 (2022). https://doi.org/10.1007/s12633-021-01421-9
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DOI: https://doi.org/10.1007/s12633-021-01421-9