Abstract
Wide bandgap semiconductor technology is gaining widespread acceptance in the area of high-power and high-temperature power electronics. Gallium nitride (GaN) not only has a wide bandgap of 3.4 eV and all the associated superior electronic properties but also enables the development of high-mobility power devices which is critical in increasing the power density of a power electronics system. Since a commercial GaN power transistor has a lateral structure as opposed to the traditional vertical device structure, commercially available devices are rated below 1000 V breakdown voltage with a maximum value of 900 V and typical value around 650 V. The primary focus of this review will be to introduce readers to the commercially available power electronic systems developed by various manufacturers which employ GaN-based power devices and highlight their remarkable performance which surpasses existing technology. This review also includes a brief introduction on GaN technology followed by current market study showing the roadmap of integration of GaN-based power electronics in the power industry.
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F. Iacopi, M. Van Hove, M. Charles, and K. Endo, MRS Bull. 40, 390 (2015).
A. Bindra and T. Keim, IEEE Power Electron. Mag. 6, 48 (2019).
T. McNutt, B. Passmore, J. Fraley, B. McPherson, R. Shaw, K. Olejniczak, and A. Lostetter, J. Electron. Mater. 43, 4552 (2014).
J.L. Hudgins, J. Electron. Mater. 32, 471 (2003).
J. Hornberger, A.B. Lostetter, K.J. Olejniczak, T. McNutt, S.M. Lal, A. Mantooth, in IEEE Aerosp. Conf. Proc., (2004), pp. 2538–2555.
L. Spaziani, L. Lu, in Proc. Int. Symp. Power Semicond. Devices ICs, Institute of Electrical and Electronics Engineers Inc., (2018), pp. 8–11.
J.W. Milligan, S. Sheppard, W. Pribble, Y.F. Wu, S.G. Müller, J.W. Palmour, in IEEE Natl. Radar Conf.-Proc., (2007), pp. 960–964.
S.B. Bayne and B.N. Pushpakaran, J. Electr. Eng. Electron. Technol. 1, 1 (2012). https://doi.org/10.4172/2325-9833.1000101.
L. Cheng, A.K. Agarwal, C. Capell, M. O’loughlin, K. Lam, J. Richmond, E. Van Brunt, A. Burk, J.W. Palmour, H. O’brien, A. Ogunniyi, C. Scozzie, in Dig. Tech. Pap. Int. Pulsed Power Conf., (2013).
T.J. Flack, B.N. Pushpakaran, and S.B. Bayne, J. Electron. Mater. 45, 2673 (2016).
M. Shur, B. Gelmont, and M. Asif Khan, J. Electron. Mater. 25, 777 (1996).
B.N. Pushpakaran, A.S. Subburaj, S.B. Bayne, and J. Mookken, Renew. Sustain. Energy Rev. 55, 971 (2016).
S. Dimitrijev, in 2017 IEEE 30th Int. Conf. Microelectron., (2017), pp. 29–34.
K. V. Vasilevskiy, S.K. Roy, N. Wood, A.B. Horsfall, N.G. Wright, in Mater. Sci. Forum, Trans Tech Publications Ltd, (2017), pp. 254–257
F. Moscatelli, A. Poggi, S. Solmi, and R. Nipoti, IEEE Trans. Electron Devices 55, 961 (2008).
L.J. Brillson, G.M. Foster, J. Cox, W.T. Ruane, A.B. Jarjour, H. Gao, H. von Wenckstern, M. Grundmann, B. Wang, D.C. Look, A. Hyland, and M.W. Allen, J. Electron. Mater. 47, 4980 (2018).
B.J. Baliga, Semicond. Sci. Technol. 28, 074011 (2013).
H. Zhou, W. Liu, E. Persson, in Proc. PCIM Eur. 2015; Int. Exhib. Conf. Power Electron. Intell. Motion, Renew. Energy Energy Manag., (2015), pp. 1–6.
A.H. Wienhausen, D. Kranzer, in Mater. Sci. Forum, (2013), pp. 1123–1127.
K. Kruse, M. Elbo, Z. Zhang, in Conf. Proc.-IEEE Appl. Power Electron. Conf. Expo.-APEC, Institute of Electrical and Electronics Engineers Inc., (2017), pp. 273–278.
Q. Huang and A.Q. Huang, CPSS Trans. Power Electr. Appl. 2, 118 (2017).
Yole Développement, in Compound Semiconductor Quarterly Market Monitor (Lyon, France, 2020)
Yole Développement, in RF GaN Market: Applications, Players, Technology and Substrates 2019 report (Lyon, France, 2019)
T. Boles, in 2017 12th Eur. Microw. Integr. Circuits Conf., (2017), pp. 21–24
W.A. Melton and J.I. Pankove, J. Cryst. Growth 178, 168 (1997).
R.S. Pengelly, S.M. Wood, J.W. Milligan, S.T. Sheppard, and W.L. Pribble, IEEE Trans. Microw. Theory Tech. 60, 1764 (2012).
D. Francis, F. Faili, D. Babić, F. Ejeckam, A. Nurmikko, and H. Maris, Diam. Relat. Mater. 19, 229 (2010).
F. Ejeckam, D. Francis, F. Faili, F. Lowe, D. Twitchen, B. Bolliger, in 2015 China Semicond. Technol. Int. Conf., (2015), pp. 1–3
H. Amano, Y. Baines, E. Beam, M. Borga, T. Bouchet, P.R. Chalker, M. Charles, K.J. Chen, N. Chowdhury, R. Chu, C. De Santi, M.M. De Souza, S. Decoutere, L. Di Cioccio, B. Eckardt, T. Egawa, P. Fay, J.J. Freedsman, L. Guido, O. Häberlen, G. Haynes, T. Heckel, D. Hemakumara, P. Houston, J. Hu, M. Hua, Q. Huang, A. Huang, S. Jiang, H. Kawai, D. Kinzer, M. Kuball, A. Kumar, K.B. Lee, X. Li, D. Marcon, M. März, R. McCarthy, G. Meneghesso, M. Meneghini, E. Morvan, A. Nakajima, E.M.S. Narayanan, S. Oliver, T. Palacios, D. Piedra, M. Plissonnier, R. Reddy, M. Sun, I. Thayne, A. Torres, N. Trivellin, V. Unni, M.J. Uren, M. Van Hove, D.J. Wallis, J. Wang, J. Xie, S. Yagi, S. Yang, C. Youtsey, R. Yu, E. Zanoni, S. Zeltner, and Y. Zhang, J. Phys. D. Appl. Phys. (2018). https://doi.org/10.1088/1361-6463/aaaf9d.
F. Roccaforte, G. Greco, P. Fiorenza, and F. Iucolano, Materials 12, 1599 (2019).
E.A. Jones, F.F. Wang, and D. Costinett, IEEE J. Emerg. Sel. Top. Power Electron. 4, 707 (2016).
Transphorm Inc., 600 V Cascode GaN FET in PQFN88 (drain tab), TPH3206LDG datasheet (2017)
GaN Enables 504 W Power supply module to be 28 percent smaller. https://powerpulse.net/504w-gan-based-power-supply-module-28-percent-smaller/. Accessed 01 Jul. 2019.
TDK-Lambda Inc., 500 Watt AC-DC power module, PHF500F Series datasheet (2019)
Aveox to launch ultra-high efficiency AC power conversion modules with APFC powered by GaN systems. https://www.globenewswire.com/news-release/2019/03/18/1756427/0/en/Aveox-to-Launch-Ultra-High-Efficiency-AC-Power-Conversion-Modules-with-APFC-Powered-by-GaN-Systems.html. Accessed 01 Jul. 2019.
Aveox and gan systems partner on 3-phase active power factor correction. https://powerpulse.net/gan-systems-partners-with-aveox-to-make-5-x-smaller-3-phase-converters-with-apfc/. Accessed 01 Jul. 2019.
T. MacElwee, L. Yushyna, P. Stoimenov, A. Mizan, J. Roberts, High performance GaN E-HEMT power device in an embedded package, GaN Systems Inc.
GaN Systems Inc., Thermal design for GaN systems’ Top-side cooled GaNpx®-T packaged devices. Application Note GN002 (2018)
GaN Systems Inc., PCB thermal design guide for GaN enhancement mode power transistors. Application Note GN005 (2016)
PFC totem pole architecture and GaN combine for high power and efficiency. https://www.edn.com/design/power-management/4458513/PFC-totem-pole-architecture-and-GaN-combine-for-high-power-and-efficiency. Accessed 01 Jul. 2019.
Bel Power Solutions and Protection., AC-DC Front-End Power Supply, TET3000-12-069RA datasheet (2018)
Transphorm Inc., 650 V Cascode GaN FET inTO-247 (source tab), TPH3205WSB datasheet (2018)
The New Flatpack2 SHE Rectifier. https://www.eltek.com/us/insights/she-is-so-cool/. Accessed 01 Jul. 2019.
Infineon Technologies AG. Eltek Launches The Flatpack2 SHE, A super high efficient power conversion module with the new game changing coolgan™ technology from infineon at its core. 2019, https://www.infineon.com/cms/en/about-infineon/press/market-news/2017/INFPMM201710-004.html. Accessed 01 July 2019.
Eltek, A delta group company, super high efficiency (SHE) rectifier for telecom applications, Flatpack2 48 V/3000 SHE Rectifier datasheet (2017)
PFC Transphorm’s high-voltage gan helps inergy disrupt the solar power generator market…again. https://www.businesswire.com/news/home/20181204005378/en/Transphorm%E2%80%99s-High-Voltage-GaN-Helps-Inergy-Disrupt-Solar. Accessed 01 Jul. 2019.
POWER-GEN Show. https://inergytek.com/pages/kodiakextreme. Accessed 01 Jul. 2019.
Transphorm Inc., 650 V GaN FET PQFN Series, TPH3206LDGB datasheet (2019)
Transphorm Inc., 650 V GaN FET inTO-247 (source tab), TP65H050WS datasheet (2018)
Transphorm Inc., 650 V GaN FET PQFN Series, TP65H150LSG preliminary datasheet (2019)
Transphorm Inc., 600 V Cascode GaN FET inTO-247 (source tab), TPH3205WS datasheet (2018)
The emperor of efficiency: corsair’s Ax1600i PSU rules alone (Review). https://www.anandtech.com/show/12645/the-corsair-ax1600i-psu-review-unparalleled-performance. Accessed 01 Jul. 2019.
Corsair, Digital ATX Power Supply, AX1600i product manual (2017)
STMicroelectronics, Overview of USB Type-C and Power Delivery technologies, TA0357 technical article (2018)
Navitas found inside the RAVPower RP-PC104-W gallium nitride 45 W USB C power delivery charger. https://www.techinsights.com/blog/navitas-found-inside-ravpower-rp-pc104-w-gallium-nitride-45-w-usb-c-power-delivery-charger. Accessed 01 Jul. 2019.
Navitas Semiconductor, 650 V GaNFast™ Power IC, NV6115 datasheet (2018)
RAVPower RP-PC104 45 W ultrathin PD wall charger, User Manual.
Power Integrations Scores OEM design win with their PowiGaN technology. https://www.techinsights.com/blog/power-integrations-scores-oem-design-win-their-powigan-technology. Accessed 29 March 2020
Software-defined inverter features 3-phase gan power stage. https://powerpulse.net/software-defined-inverter-features-3-phase-gan-power-stage/. Accessed 01 Jul. 2019.
Texas Instruments, Piccolo™ 32-bit MCU with 90 MHz, FPU, VCU, 256 KB Flash, CLA, InstaSPIN-MOTION, TMS320F28069MPZT datasheet (2018)
Efficient Power Conversion Corporation (EPC), Enhancement mode power transistor in passivated die form with solder bumps, EPC2021 datasheet (2019)
SDI TAPAS Community Inverter, Quick-start guide 2.0
M. Su, C. Chen, L. Chen, M. Esposto, S. Rajan, in 2012 Int. Conf. Compd. Semicond. Manuf. Technol. CS MANTECH 2012, (2012).
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Pushpakaran, B.N., Subburaj, A.S. & Bayne, S.B. Commercial GaN-Based Power Electronic Systems: A Review. J. Electron. Mater. 49, 6247–6262 (2020). https://doi.org/10.1007/s11664-020-08397-z
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DOI: https://doi.org/10.1007/s11664-020-08397-z