Abstract
Ga2−x Sn x O3 thin films were deposited on c-plane Al2O3 (0001) substrates with different Sn content by laser molecular beam epitaxy technology (L-MBE). The Sn content x was varied from 0 to 1.0. (\(\bar{2}01\)) oriented β-phase Ga2−x Sn x O3 thin films were obtained at the substrate temperature of 850°C in the vacuum pressure of 5 × 10−5 Pa. The crystal lattice expanded and the energy band-gap decreased with the increase of Sn content for Sn4+ ions incorporated into the Ga site. The n-type conductivity was generated effectively through doping Sn4+ ions in the Ga2O3 lattice in the oxygen-poor conditions. The solar-blind (SB) photodetectors (PDs) based on Ga2−x Sn x O3 (x = 0, 0.2) thin films were fabricated. The current intensity and responsivity almost increased by one order of magnitude and the relaxation time constants became shorter for x = 0.2. Our work suggests that the performance of PD can be improved by doping Sn4+ ions in Ga2O3 thin films.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
A. Malik, A. Sêco, E. Fortunato, and R. Martins, Sens. Actuators A 67, 68 (1998).
L. Li, E. Auer, M. Liao, X. Fang, T. Zhai, U.K. Gautam, A. Lugstein, Y. Koide, Y. Bando, and D. Golberg, Nanoscale 3, 1120 (2011).
N. Biyikli, I. Kimukin, T. Kartaloglu, O. Aytur, and E. Ozbay, Appl. Phys. Lett. 82, 2344 (2003).
K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, Science 300, 1269 (2003).
W.Y. Weng, T.J. Hsueh, S.J. Chang, G.J. Huang, H.T. Hsueh, Z.D. Huang, and C.J. Chiu, IEEE Sens. J. 11, 1795 (2011).
M. Liao, Y. Koide, and J. Alvarez, Appl. Phys. Lett. 87, 022105 (2005).
X. Du, Z. Mei, Z. Liu, Y. Guo, T. Zhang, Y. Hou, Z. Zhang, Q. Xue, and A.Y. Kuznetsov, Adv. Mater. 21, 4625 (2009).
R. Roy, V.G. Hill, and E.F. Osborn, J. Am. Chem. Soc. 74, 719 (1952).
M. Passlack, E.F. Schubert, W.S. Hobson, M. Hong, N. Moriya, S.N.G. Chu, K. Konstadinidis, J.P. Mannaerts, M.L. Schnoes, and G.J. Zydzik, J. Appl. Phys. 77, 686 (1995).
G.A. Battiston, R. Gerbasi, M. Porchia, R. Bertoncello, and F. Caccavale, Thin Solid Films 279, 115 (1996).
S. Geller, J. Chem. Phys. 33, 676 (1960).
H. Aida, K. Nishiguchi, H. Takeda, N. Aota, K. Sunakawa, and Y. Yaguchi, Jpn. J. Appl. Phys. 47, 8506 (2008).
W.Y. Weng, T.J. Hsueh, S.J. Chang, G.J. Huang, and H.T. Hsueh, IEEE Sens. J. 11, 999 (2011).
D.Y. Guo, Z.P. Wu, P.G. Li, Y.H. An, H. Liu, X.C. Guo, H. Yan, G.F. Wang, C.L. Sun, L.H. Li, and W.H. Tang, Opt. Mater. Express. 4, 1067 (2014).
Y. Kokubun, K. Miura, F. Endo, and S. Nakagomi, Appl. Phys. Lett. 90, 031912 (2007).
D.Y. Guo, Z.P. Wu, Y.H. An, X.C. Guo, X.L. Chu, C.L. Sun, L.H. Li, P.G. Li, and W.H. Tang, Appl. Phys. Lett. 105, 023507 (2014).
X.L. Zhao, Z.P. Wu, W. Cui, Y.S. Zhi, D.Y. Guo, L.H. Li, W.H. Tang, ACS Appl. Mater. Interfaces. 9, 983 (2017).
N. Ueda, H. Hosono, R. Waseda, and H. Kawazoe, Appl. Phys. Lett. 70, 3561 (1997).
Z. Hajnal, J. Miro, G. Kiss, F. Reti, P. Deak, R.C. Herndon, and J.M. Kuperberg, J. Appl. Phys. 86, 3792 (1999).
M. Orita, H. Ohta, M. Hirano, and H. Hosono, Appl. Phys. Lett. 77, 4166 (2000).
M.D. Heinemann, J. Berry, G. Teeter, T. Unold, and D. Ginley, Appl. Phys. Lett. 108, 022107 (2016).
X.J. Du, Z. Li, C.N. Luan, W.G. Wang, M.X. Wang, X.J. Feng, H.D. Xiao, and J. Ma, J. Mater. Sci. 50, 3252 (2015).
W. Mi, X.J. Du, C.N. Luan, H.D. Xiao, and J. Ma, RSC Adv. 4, 30579 (2014).
W. Mi, Z. Li, C.N. Luan, H.D. Xiao, C.S. Zhao, and J. Ma, Ceram. Int. 41, 2572 (2015).
J. Kudou, S. Funasaki, M. Takahara, I. Tsunoda, K. Takakura, H. Ohyama, T. Nakashima, M. Shibuya, K. Murakami, E. Simoen, and C. Claeys, Mater. Sci. Forum 725, 269 (2012).
D.Y. Guo, X.L. Zhao, Y.S. Zhi, W. Cui, Y.Q. Huang, Y.H. An, P.G. Li, Z.P. Wu, and W.H. Tang, Mater. Lett. 164, 364 (2016).
Joint Committee on Powder Diffraction Standards (JCPDS), Powder Diffraction Files, Inorganic, No. 43-1012.
X.L. Zhao, Z.P. Wu, D.Y. Guo, W. Cui, P.G. Li, Y.H. An, L.H. Li, and W.H. Tang, Semicond. Sci. Technol. 31, 6 (2016).
D.Y. Guo, Y.H. An, W. Cui, X.L. Zhao, Y.S. Zhi, M. Lei, L.H. Li, P.G. Li, Z.P. Wu, and W.H. Tang, Sci. Rep. 6, 25166 (2016).
J. Tauc and F. Abeles, Optical Properties of Solids (Amsterdam: North Holland, 1972).
I. Vurgaftman, J.R. Meyer, and L.R. Ram-Mohan, J. Appl. Phys. 89, 5815 (2001).
Z. Liu, D. Zhang, S. Han, C. Li, and T. Tang, Adv. Mater. 15, 1754 (2003).
N. Liu, G. Fang, W. Zeng, H. Zhou, F. Cheng, Q. Zheng, L. Yuan, X. Zou, and X. Zhao, ACS. Appl. Mater. Int. 2, 1973 (2010).
T. Murphy, K. Moazzami, and J. Phillips, J. Electron. Mater. 35, 543 (2006).
P. Ravadgar, R.H. Horng, S.D. Yao, H.Y. Lee, B.R. Wu, S.L. Ou, and L.W. Tu, Opt. Express 21, 24599 (2013).
Acknowledgements
This work was supported by the National Natural Science Foundation of China (Nos. 51572033, 11404029, 51172208), Beijing Natural Science Foundation (No. 2154055), the Beijing University of Posts and Telecommunications (BUPT) Excellent Ph.D. Students Foundation (CX2015304), and the China Postdoctoral Science Foundation Funded Project (Grant No. 2014M550661).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Zhao, X., Cui, W., Wu, Z. et al. Growth and Characterization of Sn Doped β-Ga2O3 Thin Films and Enhanced Performance in a Solar-Blind Photodetector. J. Electron. Mater. 46, 2366–2372 (2017). https://doi.org/10.1007/s11664-017-5291-5
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-017-5291-5