Abstract
This paper proposes a new model for the subthreshold current and swing of the short-channel symmetric underlap ultrathin double gate metal oxide field effect transistors with a source/drain lateral Gaussian doping profile. The channel potential model already reported earlier has been utilized to formulate the closed form expression for the subthreshold current and swing of the device. The effects of the lateral straggle and geometrical parameters such as the channel length, channel thickness, and oxide thickness on the off current and subthreshold slope have been demonstrated. The devices with source/drain lateral Gaussian doping profiles in the underlap structure are observed to be highly resistant to short channel effects while improving the current drive. The proposed model is validated by comparing the results with the numerical simulation data obtained by using the commercially available ATLAS™, a two-dimensional (2-D) device simulator from SILVACO.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
S. Dubey, A. Santra, G. Saramekala, M. Kumar, and P.K. Tiwari, IEEE Trans. Nanotechnol. 12, 766 (2013).
T. Sekigawa and Y. Hayashi, Solid-State Electron. 27, 827 (1984).
D. Munteanu, J.L. Autran, S. Harrison, K. Nehari, O. Tintori, and T. Skotnicki, Mol. Simul. 31, 831 (2005).
L. Wei, Z. Chen, and K. Roy, Proceedings on IEEE International SOI Conference (1998).
T. Holtij, M. Schwarz, A. Kloes, and B. Iñíguez, IETE 58, 205 (2012).
A. Bansal, B.C. Paul, and K. Roy, Proceedings on IEEESOI Conference, vol. 94 (2004).
R. Gusmeroli, A.S. Spinelli, A. Pirovano, A.L. Lacaita, F. Boeuf, and T. Skotnicki, IEDM Technical Digest 9.1.1 (2003).
A. Bansal, B.C. Paul, and K. Roy, IEEE Trans. Electron Dev. 52, 256 (2005).
A. Nandi, A.K. Saxena, and S. Dasgupta, IEEE Trans. Electron Dev. 60, 3705 (2013).
ATLAS Users Manual (Silvaco International, Santa Clara, CA, 2000).
S. Dubey, P.K. Tiwari, and S. Jit, J. Appl. Phys. 108, 034517 (2010).
K. Singh, M. Kumar, E. Goel, B. Singh, S. Dubey, S. Kumar, and S. Jit, J. Electron. Mater. 45, 2184 (2015).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Singh, K., Kumar, S., Goel, E. et al. Subthreshold Current and Swing Modeling of Gate Underlap DG MOSFETs with a Source/Drain Lateral Gaussian Doping Profile. J. Electron. Mater. 46, 579–584 (2017). https://doi.org/10.1007/s11664-016-4914-6
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-016-4914-6