Abstract
In a novel approach, high temperatures (1200–1400°C) were used to oxidize cubic silicon carbide (3C-SiC) grown on silicon substrate. High-temperature oxidation does not significantly affect 3C-SiC doping concentration, 3C-SiC structural composition, or the final morphology of the SiO2 layer, which remains unaffected even at 1400°C (the melting point of silicon is 1414°C). Metal-oxide-semiconductor capacitors (MOS-C) and lateral channel metal-oxide-semiconductor field-effect-transistors (MOSFET) were fabricated by use of the high-temperature oxidation process to study 3C-SiC/SiO2 interfaces. Unlike 4H-SiC MOSFET, there is no extra benefit of increasing the oxidation temperature from 1200°C to 1400°C. All the MOSFET resulted in a maximum field-effect mobility of approximately 70 cm2/V s.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
L. Wang, S. Dimitrijev, J. Han, P. Tanner, A. Iacopi, and L. Hold, J. Cryst. Growth 329, 67 (2011).
R. Anzalone, S. Privitera, M. Camarda, A. Alberti, G. Mannino, and G.P. Fiorenza, Mater. Sci. Eng. B 198, 14 (2015).
A. Schöner, M. Krieger, G. Pensl, M. Abe, and H. Nagasawa, Chem. Vap. Depos. 12, 523 (2006).
V.V. Afanasev, M. Bassler, G. Pensl, and M. Schulz, Phys. Status Solidi A 162, 321 (1997).
C.D. Fung and J.J. Kopanski, Appl. Phys. Lett. 45, 757 (1984).
H. Li, S. Dimitrijev, H.B. Harrison, and D. Sweatman, Appl. Phys. Lett. 70, 2028 (1997).
D. Okamoto, H. Yano, K. Hirata, T. Hatayama, and T. Fuyuki, IEEE Electron Devices Lett. 31, 710 (2010).
Y.K. Sharma, A.C. Ahyi, T. Issacs-Smith, X. Shen, S.T. Pantelides, X. Zhu, L.C. Feldman, J. Rozen, and J.R. Williams, Solid-State Electron. 68, 103 (2012).
A. Modic, Y.K. Sharma, Y. Xu, G. Liu, A.C. Ahyi, J.R. Williams, L.C. Feldman, and S. Dhar, J. Electron. Mater. 43, 857 (2014).
A. Modic, G. Liu, A.C. Ahyi, Y. Zhou, P. Xu, M.C. Hamilton, A.C. Ahyi, and S. Dhar, IEEE Electron Devices Lett. 35, 894 (2014).
S.M. Thomas, M.R. Jennings, Y.K. Sharma, C.A. Fisher, and P.A. Mawby, Mater. Sci. Forum 778, 599 (2014).
S.M. Thomas, Y.K. Sharma, M.A. Crouch, C.A. Fisher, A. Perez-Tomas, M.R. Jennings, and P.A. Mawby, IEEE J. Electron Devices Soc. 2, 114 (2014).
H. Kurimoto, K. Shibata, C. Kimura, H. Aoki, and T. Sugino, Appl. Surf. Sci. 253, 2416 (2006).
H. Naik and P. Chow, Mater. Sci. Forum 778, 607 (2014).
X. Shen and S.T. Pantelides, Appl. Phys. Lett. 98, 053507 (2011).
R. Esteve, A. Schöner, S.A. Reshanov, C.M. Zetterling, and H. Nagasawa, J. Appl. Phys. 106, 044513 (2009).
N.L. Cohen, R.E. Paulsen, M.H. White, and I.E.E.E. Trans, Electron Devices 42, 2004 (1995).
F.C.J. Kong, S. Dimitrijev, and J. Han, IEEE Electron Devices Lett. 29, 1021 (2008).
E.H. Nicollian and J.R. Brews, MOS Physics and Technology (Hoboken: Wiley, 2003).
M. Krieger, S. Beljakowa, L. Trapaidze, T. Frank, H.B. Weber, G. Pens, N. Hatta, M. Abe, H. Nagasawa, and A. Schöner, Phys. Status Solidi B 245, 1390 (2008).
J. Wan, M.A. Capano, M.R. Melloch, and J.A. Cooper, IEEE Electron Devices Lett. 31, 23 (2002).
K.K. Lee, Y. Ishida, T. Ohshima, K. Kojima, Y. Tanaka, T. Takahashi, and T. Kamiya, IEEE Electron Devices Lett. 24, 466 (2003).
M. Bakowski, A. Schöner, P. Ericsson, H. Strömberg, H. Nagasawa, and M. Abe, J. Telecommun. Inf. Technol. 2, 49 (2007).
H. Uhida, A. Minami, T. Sakata, H. Nagasawa, and M. Kobayashi, Mater. Sci. Forum 717, 1109 (2011).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Sharma, Y.K., Li, F., Jennings, M.R. et al. High-Temperature (1200–1400°C) Dry Oxidation of 3C-SiC on Silicon. J. Electron. Mater. 44, 4167–4174 (2015). https://doi.org/10.1007/s11664-015-3949-4
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-015-3949-4