Abstract
Broadband photodetector has wide applications in the field of remote sensing, health monitoring and medical imaging. Two-dimensional (2D) materials with narrow bandgaps have shown enormous potential in broadband photodetection. However, the device performance is often restricted by the high dark currents. Herein, we demonstrate a high performance broadband photodetector by constructing Bi2O2Se/BP van der Waals heterojunction. The device exhibits a p-n diode behavior with a current rectification ratio of ∼20. Benifited from the low dark current of the heterojunction and the effective carrier separation, the device achieves the responsivity (R) of ∼ 500 A/W, ∼ 4.3 A/W and ∼ 2.3 A/W at 700 nm, 1310 nm and 1550 nm, respectively. The specific detectivity (D*) is up to ∼ 2.8 × 1011 Jones (700 nm), ∼ 2.4 × 109 Jones (1310 nm) and ∼ 1.3 × 109 Jones (1550 nm). Moreover, the response time is ∼ 9 ms, which is more than 20 times faster than that of individual BP (∼ 190 ms) and Bi2O2Se (∼ 180 ms) devices.
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Acknowledgements
This work was supported by National Key Research and Development Program of China (Grant Nos. 2017YFA0205700, 2019YFA0308000), National Natural Science Foundation of China (Grant Nos. 61774034, 91963130, 11704068, 61705106), Jiangsu Natural Science Foundation (Grant No. BK20170694), and the Fundamental Research Funds for the Central Universities.
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Liu, X., Wang, W., Yang, F. et al. Bi2O2Se/BP van der Waals heterojunction for high performance broadband photodetector. Sci. China Inf. Sci. 64, 140404 (2021). https://doi.org/10.1007/s11432-020-3101-1
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DOI: https://doi.org/10.1007/s11432-020-3101-1