Abstract
Due to their unique structure and photoelectrical properties, two-dimensional (2D) materials have attracted enormous attention on next-generation optoelectronic devices. Recently, the newly discovered 2D layered Bi2O2Se has exhibited outstanding sensitivity and optoelectronic properties. However, the performance of these 2D layered Bi2O2Se photodetectors can be limited by the high dark currents. The suitable band structure of 2D MoSe2 can form a type-II heterojunction with Bi2O2Se, which can reduce the dark current, modulate the interlayer transition energy and induce the charge spatial separation. Herein, we demonstrated a photodetector based on the heterojunction fabricated by van der Waals assembly between Bi2O2Se and few-layer MoSe2, showing visible to near-infrared detection range. Moreover, our results showed that the dark current of this photodetector was significantly reduced and the Ion/Ioff ratio was greatly improved. Importantly, it exhibited a broad detection range from 405 to 808 nm with a responsivity of 413.1 mA W−1, a high detectivity of 3.7 × 1011 Jones (at 780 nm) at room temperature. Compared with the 2D Bi2O2Se photodetector, the photocurrent response and recovery time in the heterojunction photodetector was greatly reduced from 1.92/1.31 to 0.79/0.49 s at room temperature. Our results showed that 2D Bi2O2Se/MoSe2 heterojunction has a great potential for broadband and fast photodetection.
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Introduction
During the past decades, two-dimensional (2D) materials have attracted enormous attention for photodetection applications due to their layered structure, mechanical flexibility, layer-dependent electronic band structures and easily constructed heterostructures [1,2,3,4,5]. Generally, the ideal detectors should have fast respond, high sensitivity and air stability, which are rare to meet at the same time in one material [6,7,8,9,10,11,12]. As the most extensively studied 2D material, graphene shows a relatively low optical absorption coefficient due to the lack of a band gap [13,14,15]. Though MoS2 has shown good properties in optoelectronic applications, the corresponding photodetectors only respond to the visible region, leading to limitation of their application in the infrared region [16,17,18]. As an analog to graphene, black phosphorus with a direct bandgap also shows promising applications in photodetectors, while it is not stable in the air [19,20,21]. Due to the availability of 2D materials with various bandgaps and work functions, bandgap engineering of heterostructures can be realized through heterogeneous stacks built by different 2D materials, providing solutions for multifunctional hybrid photodetectors [22,23,24,25].
As a new type of 2D semiconductor, Bi2O2Se has been reported to possess high mobility and superior air stability [26]. Bi2O2Se consists alternative compensating cations ((Bi2O2) 2 n+ n ) and anions (Se 2 n− n ). The layers are held together by weak electrostatic forces with an interlayer spacing of about 0.608 nm (Fig. 1a) [27]. However, the high dark current and small on/off ratio limit the performance of the photodetector based on Bi2O2Se on f-mica substrate [28, 29]. It has been reported that the Type-II heterojunction can reduce the dark current, modulate the interlayer transition energy and induce the charge spatial separation [30,31,32,33,34]. The Bi2O2Se typically exhibits an indirect band gap of ~ 1.14 eV and the monolayer MoSe2 exhibit a direct bandgap of ~ 1.51 eV [35,36,37]. Therefore, 2D MoSe2 can form a type-II van der Waals heterostructure with Bi2O2Se, which is quite promising for the performance improvement in Bi2O2Se-based photodetectors [38,39,40].
Here, we constructed a type-II Bi2O2Se/MoSe2 van der Waals heterojunction and investigated the photodetection performance. Compared with the 2D Bi2O2Se photodetector, the dark current was significantly reduced and the on/off ratio was greatly improved in the Bi2O2Se–MoSe2 heterostructure. Moreover, the Bi2O2Se–MoSe2 based photodetector showed a broadband photoresponsivity from visible (405 nm) to near-infrared (808 nm) light illumination. Compared with the 2D Bi2O2Se photodetector, the photocurrent response and recovery time were greatly reduced in the heterojunction photodetector. Under the illumination of 780 nm laser, the heterojunction showed a responsivity of 413.1 mA W−1 and a detectivity of 3.7 × 1011 Jones at 2 V voltage.
Experimental section
Synthesis of 2D Bi2O2Se
The 2D Bi2O2Se crystals were synthesized through chemical vapor deposition method (CVD) in a dual zone split tube furnace (OTF-1200X, Hefei Kejing Material Technology Company Ltd., China) equipped with a 40-mm-diameter quartz tube. Typically, the source materials of Bi2O3 powder (aladdin, 99.99%) and Bi2Se3 power (aladdin, 99.99%) were placed in the center and upstream by 5 cm of high-temperature zone, respectively. The freshly cleaved fluorophlogopite mica ([KMg3(AlSi3O10)F2]) was placed in the center of low-temperature zone as the target growth substrate (Fig. 1b). High-purity Ar gas was used as the carrier gas with a constant flow rate of 300 sccm and the pressure was kept at 0.3 atm. The whole reaction process was carried out under the furnace temperature of 640 °C and 540 °C and the growth was maintained for 30-60 min. Then, the furnace was naturally cooled down to the room temperature.
Characterization
The morphology of the as-grown Bi2O2Se was characterized by optical microscopy (OM, Olympus BX51 M microscope). The X-ray diffraction (XRD, X’Pert Powder PANalytical B.V.) was used to confirm the lattice structure of the 2D Bi2O2Se. The atomic force microscopy (AFM, AIST-NT) was used to investigate the thickness of 2D Bi2O2Se crystals. The element valence state of 2D Bi2O2Se crystals was characterized by X-ray photoelectron spectroscopy (XPS, AXIS Supra). Raman spectra were collected with a confocal Raman spectrometer (LabRAM HR Evolution) using a He–Ne laser (633 nm). The as-synthesized samples were transferred onto the copper grid supported lacey carbon film by using a HF-etched transfer method and the crystal structure was characterized by transmission electron microscopy (TEM, JEOL 2100) [26, 41].
Device preparation
The Bi2O2Se/MoSe2 heterojunctions were achieved through a polymethyl methacrylate (PMMA)-mediated transfer method. Firstly, the PMMA (450 K, Suzhou Research Semiconductor Company Ltd., China.) was spin-coated over 2D MoSe2 grown on SiO2/Si substrates (Shenzhen 6Carbon Technology Company Ltd.) and baked at 80–90 °C for 15 min to facilitate intimate adhesion of the PMMA layer with MoSe2. After that, the SiO2/Si substrate was etched in 2.5 mol L−1 NaOH solution to separate the PMMA/MoSe2 with the Si substrate. After several washes in the deionized (DI) water, the PMMA-MoSe2 film was then transferred onto the mica substrate with grown 2D Bi2O2Se. After baking at 110 °C for 30 min, the PMMA was finally removed with acetone and the mica substrate was cleaned with alcohol and DI water. The metallic contacts for the Bi2O2Se/MoSe2 heterojunction were fabricated by standard electron beam lithography, thermal deposition of Cr/Au (10 nm/50 nm), and lift-off processes.
Optoelectronic measurements
The electrical measurements were performed using Lake Shore CPX probe station and Keithley 4200 semiconductor characterization system. The excitation laser wavelengths used in this paper were 405 nm, 515 nm, 660 nm, 780 nm and 808 nm.
Results and discussion
Single crystalline 2D Bi2O2Se samples were synthesized through a low-pressure CVD method. According to the OM image (Fig. 1c), Bi2O2Se nanoplates up to 40 μm with square morphology were obtained, indicating the tetragonal structure of Bi2O2Se. The corresponding high-resolution transmission electron microscopy (HRTEM) image in Fig. 1d indicates the single crystallinity and tetragonal structure of our synthesized Bi2O2Se nanoplates, which is also confirmed by the selected area electron diffraction (SAED) pattern (insert in Fig. 1d). As indicated in the HRTEM, d-spacing of 0.27 nm and 0.19 nm correspond, respectively, to the (200) and (110) planes with angle of 45°. The XRD spectrum (Fig. 1e) peaks of 14.39°, 29.15°, 44.44° correspond to the (002), (004) and (006) diffractions of tetragonal Bi2O2Se. According to the AFM image shown in Fig. 1f, the surface of the as-grown sample is homogeneous and the thickness is about 4.5 nm, which corresponds to a seven-layer sample.
The CVD synthesized 2D MoSe2 (Shenzhen 6Carbon Technology Company Ltd.) generally showed a thickness of 1.3 nm (Fig. S1(a)). The HRTEM image and corresponding SAED pattern (Fig. S1(b)) showed the single crystallinity of the synthesized MoSe2. With PMMA-assisted transfer method, the Bi2O2Se/MoSe2 heterojunctions were constructed by transferring MoSe2 directly onto the as-grown Bi2O2Se on mica (Fig. 2a). Due to the inertness of f-mica and strong electrostatic interaction between the Bi2O2Se with the substrate, hydrofluoric acid (HF) becomes the only f-mica etchant which can help the transfer of Bi2O2Se/MoSe2 from the f-mica to the TEM grid. However, as a component of typical buffered oxide etchant, Bi2O2Se can be inevitably etched by HF during the transfer process. Therefore, the Raman spectroscopy was performed to further verify the Bi2O2Se/MoSe2 heterojunction. Figure 2b shows the corresponding Raman spectra for MoSe2 and Bi2O2Se obtained from point 1 and point 2 in Fig. 2a, where the A1g (240 cm−1), \( E^{1}_{{2{\text{g}}}} \) (280 cm−1) mode of MoSe2 and A1g (160 cm−1) mode of Bi2O2Se can be observed. The Raman intensity mappings of the white framed area in Fig. 2a with the A1g mode of MoSe2 at 240 cm−1 (Fig. 2c) and A1g mode of Bi2O2Se at 160 cm−1 (Fig. 2d) show clearly the formation of the Bi2O2Se/MoSe2 heterojunction (Fig. 2e).
In order to study the photoresponse performance of the Bi2O2Se/MoSe2 heterojunction, two-terminal devices were fabricated and the schematic illustration of this device is presented in Fig. 3a. Figure 3b shows the I − V curves of the photodetector in dark and under light illuminations with various wavelengths. According to our results, it can be seen that the photodetector experienced a remarkable current increase under light illuminations and the Ion/Ioff ratios at 2 V bias voltage are 17.89, 746.45, 434.58, 218.01 and 60.25 when illuminated by lasers with wavelength of 405 nm (0.2 mW cm−2), 515 nm (40.9 mW cm−2), 660 nm (114.1 mW cm−2), 780 nm (1197.1 mW cm−2) and 808 nm (32.47 mW cm−2). When compared with the performance of our synthesized pure Bi2O2Se (Fig. S2 in the supporting information), the dark current was significantly lowered (2.1 pA vs. 150 pA) and the Ion/Ioff ratio was greatly improved (746.45 vs. 20.28 at 515 nm) through the construction of Bi2O2Se/MoSe2 heterojunction.
To quantify the effect of light intensity on the device performance, the I − V characteristics of the Bi2O2Se/MoSe2 heterojunction photodetector were measured under illumination of 780 nm laser with power intensities ranging from dark to 1191.7 mW cm−2. The responsivity (R) and specific detectivity (D*) of this photodetector can be obtained based on the following equations [42,43,44,45,46]:
where Popt, S, A, e, and ID are light intensity, irradiation area, device area, unit charge, and dark current, respectively. The responsivity and detectivity as a function of light intensities (780 nm) are presented in Fig. 3d. Both the responsivity and the detectivity decrease with the increasing light intensities, and reach 413.1 mA W−1 and 3.7 × 1011 Jones (1 Jones = 1 cm Hz1/2 W−1) under the intensity of 0.09 mW cm−2.
The I − V curves under light illumination with different wavelengths revealed that the Bi2O2Se/MoSe2 heterojunction photodetector has a broad photoresponse from 405 to 808 nm (Fig. 3b). Therefore, the photoresponse properties of Bi2O2Se/MoSe2 heterojunction photodetector to incident light with different wavelengths were further investigated. As shown in Fig. 4a–e, the photodetector exhibited stable and repeatable photoresponse to lasers with wavelengths of 405 nm (0.2 mW cm−2), 515 nm (40.9 mW cm−2), 660 nm (114.1 mW cm−2), 780 nm (1197.1 mW cm−2) and 808 nm (32.47 mW cm−2) under bias of 1.5 V, indicating that Bi2O2Se/MoSe2 heterojunction photodetector can response to light signals with a wide spectrum range from visible to NIR.
The response speed of the Bi2O2Se/MoSe2 heterojunction photodetector was evaluated by analyzing the rising and falling edges of individual response cycle (Fig. S4). The response time was calculated to be 0.79/0.49 s under illumination of 515 nm with power intensity of 40.9 mW cm−2 at 1.5 V bias. Compared with the 2D Bi2O2Se photodetector (Fig. S3), the photocurrent response and recovery time was greatly reduced in the heterojunction photodetector. The device performances of the Bi2O2Se/MoSe2 heterojunction photodetector and some recently reported 2D material-based photodetectors are summarized in Table 1. According to the summarized date, our reported Bi2O2Se/MoSe2 heterojunction photodetector show higher detectivity and the measured rise/decay time is closely comparable to the values reported for many 2D materials-based photodetectors [47,48,49,50,51,52,53,54,55,56,57,58]. Moreover, the Bi2O2Se/MoSe2 heterojunction show higher responsivity than other 2D material-based heterojunctions like CuO/MoS2, MoS2/MoTe2, MoS2/graphene etc. [47,48,49,50,51] It has been reported that the longer rise and decay time observed in similar systems can be attributed to unavoidable intrinsic and/or extrinsic charge traps, e.g., surface states and atmospheric contamination [59, 60]. In our devices, the heterojunction was fabricated by transferring MoSe2 onto Bi2O2Se through a PMMA-assisted method, which can inevitably introduce undesired contamination at the interface between Bi2O2Se and MoSe2 [36]. The chemical residues left on the surface of active materials during the removal of PMMA will form undesired charge impurities [22]. Moreover, the etching process with NaOH to separate the PMMA/MoSe2 with the Si substrate may also introduce some chemical degradations on the MoSe2 layers, resulting in a relatively longer rise and decay time. Since the direct growth of 2D heterojunction will help us get a high-quality clean interface, growing Bi2O2Se/MoSe2 heterostructures without a transferring method can help to further improve the corresponding photodetection performance of the Bi2O2Se/MoSe2 system [61].
Figure 4f illustrates the alignment of electronic bands of Bi2O2Se and MoSe2. It shows that the electron affinities of Bi2O2Se and MoSe2 are 4.54 eV and 3.96 eV, the bandgaps are 1.14 eV and 1.51 eV, respectively. Consequently, the Bi2O2Se/MoSe2 heterostructure forms a type-II heterojunction, with the conduction band minimum residing in Bi2O2Se and the valence band maximum in MoSe2 [26, 35, 36]. In type-II heterojunctions, the conduction band minimum and valence band maximum reside in two separate materials. Photoexcited electrons and holes therefore prefer to stay at separate locations. As demonstrated in Fig. 4f, electron-hole pairs exist under the light illumination, and the electrons on the conduction band transfer from MoSe2 to Bi2O2Se, while the holes on the valence band transfer from Bi2O2Se to MoSe2, resulting in the efficient charge separation [62].
Conclusion
In conclusion, the 2D layered Bi2O2Se samples have been synthesized with low-pressure CVD method and the Bi2O2Se/MoSe2 heterojunction with type-II band alignment was constructed for photodetection. Our results indicate that this heterojunction photodetector showed broadband detection ranging from visible (405 nm) to near infrared (808 nm) with a responsivity of 413.1 mA W−1, detectivity of 3.7 × 1011 Jones (at 780 nm). Compared with the 2D Bi2O2Se photodetector, the dark current was significantly reduced and the Ion/Ioff ratio was greatly improved. Importantly, the rise/decay time of the Bi2O2Se/MoSe2 heterojunction photodetector was reduced from 1.92/1.31 to 0.79/0.49 s under the illumination of 515 nm (40.9 mW cm−2 at 1.5 V). Our results showed that 2D Bi2O2Se/MoSe2 heterojunction has promising applications in the field of broadband and fast photodetection.
References
Hu W, Yang JL (2017) Two-dimensional van der Waals heterojunctions for functional materials and devices. J Mater Chem C 5:12289–12297
Xie LM (2015) Two-dimensional transition metal dichalcogenide alloys: preparation, characterization and applications. Nanoscale 7:18392–18401
Yan FG, Wei ZM, Wei X, Lv QS, Zhu WK, Wang KY (2018) Toward high-performance photodetectors based on 2D materials: strategy on methods. Small Meth 2:1700349
Tan CL, Cao XH, Wu XJ, He QY, Yang J, Zhang X, Chen JZ, Zhao W, Han SK, Nam GH, Sindoro M, Zhang H (2017) Recent advances in ultrathin two-dimensional nanomaterials. Chem Rev 117:6225–6331
Wang XT, Cui Y, Li T, Lei M, Li JB, Wei ZM (2019) Recent advances in the functional 2D photonic and optoelectronic devices. Adv Opt Mater 7:1801274
Buscema M, Island JO, Groenendijk DJ, Blanter SI, Steele GA, van der Zant HSJ, Castellanos-Gomez A (2015) Photocurrent generation with two-dimensional van der Waals semiconductors. Chem Soc Rev 44:3691–3718
Hu PA, Wen ZZ, Wang LF, Tan PH, Xiao K (2012) Synthesis of few-layer GaSe nanosheets for high performance photodetectors. ACS Nano 6:5988–5994
Sun ZH, Chang HX (2014) Graphene and graphene-like two-dimensional materials in photodetection: mechanisms and methodology. ACS Nano 8:4133–4156
Tamalampudi SR, Lu YY, Kumar RU, Sankar R, Liao CD, Moorthy KB, Cheng CH, Chou FC, Chen YT (2014) High performance and bendable few-layered InSe photodetectors with broad spectral response. Nano Lett 14:2800–2806
Zhang WJ, Chiu MH, Chen CH, Chen W, Li LJ, Wee ATS (2014) Role of metal contacts in high-performance phototransistors based on WSe2 monolayers. ACS Nano 8:8653–8661
Li X, Sun M, Shan CX, Chen Q, Wei XL (2018) Mechanical properties of 2D materials studied by in situ microscopy techniques. Adv Mater Interfaces 5:1701246
Cheng S, Li J, Han MG, Deng SQ, Tan GT, Zhang XX, Zhu J, Zhu YM (2017) Topologically allowed nonsixfold vortices in a sixfold multiferroic material: observation and classification. Phys Rev Lett 118:145501
Low T, Avouris P (2014) Graphene plasmonics for terahertz to mid-infrared applications. ACS Nano 8:1086–1101
Jorgensen JH, Cabo AG, Balog R, Kyhl L, Groves MN, Cassidy AM, Bruix A, Bianchi M, Dendzik M, Arman MA, Lammich L, Ignacio Pascual J, Knudsen J, Hammer B, Hofmann P, Hornekaer L (2016) Symmetry-driven band gap engineering in hydrogen functionalized graphene. ACS Nano 10:10798–10807
Xu XZ, Liu C, Sun ZH, Cao T, Zhang ZH, Wang E, Liu ZF, Liu KH (2018) Interfacial engineering in graphene bandgap. Chem Soc Rev 47:3059–3099
Alkis S, Oztas T, Aygun LE, Bozkurt F, Okyay AK, Ortac B (2012) Thin film MoS2 nanocrystal based ultraviolet photodetector. Opt Express 20:21815–21820
Lopez-Sanchez O, Lembke D, Kayci M, Radenovic A, Kis A (2013) Ultrasensitive photodetectors based on monolayer MoS2. Nat Nanotechnol 8:497–501
Zhang WJ, Huang JK, Chen CH, Chang YH, Cheng YJ, Li LJ (2013) High-gain phototransistors based on a CVD MoS2 monolayer. Adv Mater 25:3456–3461
Chen PF, Li N, Chen XZ, Ong WJ, Zhao XJ (2018) The rising star of 2D black phosphorus beyond graphene: synthesis, properties and electronic applications. 2D Mater 5:014002
Buscema M, Groenendijk DJ, Blanter SI, Steele GA, van der Zant HSJ, Castellanos-Gomez A (2014) Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors. Nano Lett 14:3347–3352
Engel M, Steiner M, Avouris P (2014) Black phosphorus photodetector for multispectral, high-resolution imaging. Nano Lett 14:6414–6417
Chen XS, Qiu YF, Yang HH, Liu GB, Zheng W, Feng W, Cao WW, Hu WP, Hu P (2017) In-plane mosaic potential growth of large-area 2D layered semiconductors MoS2-MoSe2 lateral heterostructures and photodetector application. ACS Appl Mater Interfaces 9:1684–1691
Zhang KN, Zhang TN, Cheng GH, Li TX, Wang SX, Wei W, Zhou XH, Yu WW, Sun Y, Wang P, Zhang D, Zeng CG, Wang XJ, Hu WD, Fan HJ, Shen GZ, Chen X, Duan XF, Chang K, Dai N (2016) Interlayer transition and infrared photodetection in atomically thin type-MoTe2/MoS2 van der Waals heterostructures. ACS Nano 10:3852–3858
Um DS, Lee YS, Lim SD, Park S, Lee H, Koe H (2016) High-performance MoS2/CuO nanosheet-on-one-dimensional heterojunction photodetectors. ACS Appl Mater Interfaces 8:33955–33962
Liu KK, Li XM, Cheng SB, Zhou R, Liang YC, Dong L, Shan CX, Zeng HB, Shen DZ (2018) Carbon-ZnO alternating quantum dot chains: electrostatic adsorption assembly and white light-emitting device application. Nanoscale 10:7155–7162
Wu JX, Yuan HT, Meng MM, Chen C, Sun Y, Chen ZY, Dang WH, Tan CW, Liu YJ, Yin JB, Zhou YB, Huang SY, Xu HQ, Cui Y, Hwang HY, Liu ZF, Chen YL, Yan BH, Peng HL (2017) High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se. Nat Nanotechnol 12:530–534
Ruleova P, Drasar C, Lostak P, Li CP, Ballikaya S, Uher C (2010) Thermoelectric properties of Bi2O2Se. Mater Chem Phys 119:299–302
Li J, Wang ZX, Wen Y, Chu JW, Yin L, Cheng RQ, Lei L, He P, Jiang C, Feng LP, He J (2018) High-performance near-infrared photodetector based on ultrathin Bi2O2Se nanosheets. Adv Funct Mater 28:1706437
Tian XL, Luo HY, Wei RF, Zhu CH, Guo QY, Yang DD, Wang FQ, Li JF, Qiu JR (2018) An ultrabroadband mid-infrared pulsed optical switch employing solution-processed bismuth oxyselenide. Adv Mater 30:1801021
Chen YC, Lu YJ, Lin CN, Tian YZ, Gao CJ, Dong L, Shan CX (2018) Self-powered diamond/β-Ga2O3 photodetectors for solar-blind imaging. J Mater Chem C 6:5727
Hu H, Guo XD, Hu DB, Sun ZP, Yang XX, Dai Q (2018) Flexible and electrically tunable plasmons in graphene-mica heterostructures. Adv Sci 5:1800175
Yang XX, Sun ZP, Low T, Hu H, Guo XD, Garcia de Abajo FJ, Avouris P, Dai Q (2018) Nanomaterial-based plasmon-enhanced infrared spectroscopy. Adv Mater 30:1704896
Zhang WJ, Wang QX, Chen Y, Wang Z, Wee ATS (2016) Van der Waals stacked 2D layered materials for optoelectronics. 2D Mater 3:022001
Cheng SB, Xu CS, Deng SQ, Han MG, Bao SY, Ma J, Nan CW, Duan WH, Bellaiche L, Zhu YM, Zhu J (2018) Interface reconstruction with emerging charge ordering in hexagonal manganite. Sci Adv 4:eaar4298
Quhe R, Liu JC, Wu JX, Yang J, Wang YY, Li QH, Li TR, Guo Y, Yang JB, Peng HL, Lei M, Lu J (2018) High-performance sub-10 nm monolayer Bi2O2Se transistors. Nanoscale 11:532–540
Gong YJ, Lei SD, Ye GL, Li B, He YM, Keyshar K, Zhang X, Wang QZ, Lou J, Liu Z, Vajtai R, Zhou W, Ajayan PM (2015) Two-step growth of two-dimensional WSe2/MoSe2 heterostructures. Nano Lett 15:6135–6141
Li X, Sun M, Cheng SB, Ren XY, Zang JH, Xu TT, Wei XL, Li SF, Chen Q, Shan CX (2019) Crystallographic-orientation dependent Li ion migration and reactions in layered MoSe2. 2D Mater 6:035027
Shaw JC, Zhou HL, Chen Y, Weiss NO, Liu Y, Huang Y, Duan XF (2014) Chemical vapor deposition growth of monolayer MoSe2 nanosheets. Nano Res 7:511–517
Guo JH, Shi YT, Bai XG, Wang XC, Ma TL (2015) Atomically thin MoSe2/Graphene and WSe2/Graphene nanosheets for the highly efficient oxygen reduction reaction. J Mater Chem A 3:24397–24404
Cheng S, Langelier B, Ra YH, Rashid RT, Mi Z, Botton GA (2019) Structural origin of the high-performance light-emitting InGaN/AlGaN quantum disks. Nanoscale 11:8994–8999
Wu JX, Tan CW, Tan ZJ, Liu YJ, Yin JB, Dang WH, Wang MZ, Peng HL (2017) Controlled synthesis of high-mobility atomically thin bismuth oxyselenide crystals. Nano Lett 17:3021–3026
Zhang ZD, Yang JH, Zhang K, Chen S, Mei FH, Shen GZ (2017) Anisotropic photoresponse of layered 2D SnS-based near infrared photodetectors. J Mater Chem C 5:11288–11293
Abderrahmane A, Ko PJ, Jung PG, Kim NH, Sandhu A (2018) Optoelectronic characterizations of two-dimensional h-BN/MoSe2 heterostructures based photodetector. Sci Adv Mater 10:627–631
Wu D, Wang YG, Zeng LH, Jia C, Wu EP, Xu TT, Shi ZF, Tian YT, Li XJ, Tsang YH (2018) Design of 2D layered PtSe2 heterojunction for the high-performance, room-temperature, broadband, infrared photodetector. ACS Photonics 5:3820–3827
Shi ZF, Xu TT, Wu D, Zhang YT, Zhang BL, Tian YT, Li XJ, Du GT (2016) Semi-transparent all-oxide ultraviolet light-emitting diodes based on ZnO/NiO-core/shell nanowires. Nanoscale 8:9997–10003
Zhang F, Shi ZF, Ma ZZ, Li Y, Li S, Wu D, Xu TT, Li X-J, Shan CX, Du GT (2018) Silica coating enhances the stability of inorganic perovskite nanocrystals for efficient and stable down-conversion in white light-emitting devices. Nanoscale 10:20131–20139
Zhang K, Peng M, Wu W, Guo J, Gao G, Liu Y, Kou J, Wen R, Lei Y, Yu A, Zhang Y, Zhai J, Wang ZL (2017) A flexible p-CuO/n-MoS2 heterojunction photodetector with enhanced photoresponse by the piezo-phototronic effect. Mater Horiz 4:274–280
Wang F, Yin L, Wang ZX, Xu K, Wang FM, Shifa TA, Huang Y, Jiang C, He J (2016) Configuration-dependent electrically tunable van der Waals heterostructures based on MoTe2/MoS2. Adv Funct Mater 26:5499–5506
Henck H, Pierucci D, Chaste J, Naylor CH, Avila J, Balan A, Silly MG, Asensio MC, Sirotti F, Johnson ATC, Lhuillier E, Ouerghi A (2016) Electrolytic phototransistor based on graphene-MoS2 van der Waals p-n heterojunction with tunable photoresponse. Appl Phys Lett 109:113103
Cho AJ, Namgung SD, Kim H, Kwon JY (2017) Electric and photovoltaic characteristics of a multi-layer ReS2/ReSe2 heterostructure. APL Mater 5:076101
Lan C, Li C, Wang S, Yin Y, Guo H, Liu N, Liu Y (2016) ZnO-WS2 heterostructures for enhanced ultra-violet photodetectors. RSC Adv 6:67520–67524
Xu H, Xing J, Lu JH, Han X, Li D, Zhou Z, Bao LH, Gao HJ, Huang Y (2019) Annealing effects on the electrical and photoelectric performance of SnS2 field-effect transistor. Appl Surf Sci 484:39–44
Sharma A, Srivastava AK, Senguttuvan TD, Husale S (2017) Robust broad spectral photodetection (UV-NIR) and ultra high responsivity investigated in nanosheets and nanowires of Bi2Te3 under harsh nano-milling conditions. Sci Rep 7:17911
Sharma A, Senguttuvan TD, Ojha VN, Husale S (2019) Novel synthesis of topological insulator based nanostructures (Bi2Te3) demonstrating high performance photodetection. Sci Rep 9:3804
Liu JL, Wang H, Li X, Chen H, Zhang ZK, Pan WW, Luo GQ, Yuan CL, Ren YL, Lei W (2019) High performance visible photodetectors based on thin two-dimensional Bi2Te3 nanoplates. J Alloys Compd 798:656–664
Kumar R, Sharma A, Kaur M, Husale S (2017) Pt-nanostrip-enabled plasmonically enhanced broad spectral photodetection in bilayer MoS2. Adv Opt Mater 5:1700009
Ma X, Zhang R, An C, Wu S, Hu X, Liu J (2019) Efficient doping modulation of monolayer WS2 for optoelectronic applications. Chin Phys B 28:037803
Zheng Z, Zhang T, Yao J, Zhang Y, Xu J, Yang G (2016) Flexible, transparent and ultra-broadband photodetector based on large-area WSe2 film for wearable devices. Nanotechnology 27:225501
Ding Y, Zhou N, Gan L, Yan X, Wu R, Abidi IH, Waleed A, Pan J, Ou X, Zhang Q, Zhuang M, Wang P, Pan X, Fan Z, Zhai T, Luo Z (2018) Stacking-mode confined growth of 2H-MoTe2/MoS2 bilayer heterostructures for UV-vis-IR photodetectors. Nano Energy 49:200–208
Mehew JD, Unal S, Torres Alonso E, Jones GF, Fadhil Ramadhan S, Craciun MF, Russo S (2017) Fast and highly sensitive ionic-polymer-gated WS2-graphene photodetectors. Adv Mater 29:1700222
Zhang Z, Gong Y, Zou X, Liu P, Yang P, Shi J, Zhao L, Zhang Q, Gu L, Zhang Y (2019) Epitaxial growth of two-dimensional metal-semiconductor transition-metal dichalcogenide vertical stacks (VSe2/MX2) and their band alignments. ACS Nano 13:885–893
Kong WY, Wu GA, Wang KY, Zhang TF, Zou YF, Wang DD, Luo LB (2016) Graphene-β-Ga2O3 heterojunction for highly sensitive deep UV photodetector application. Adv Mater 28:10725–10731
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This work was supported by the National Science Foundation of China (Grant Nos. 11804304, 61804136) and China Postdoctoral Science Foundation (Grant No. 2017M622371).
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Yang, T., Li, X., Wang, L. et al. Broadband photodetection of 2D Bi2O2Se–MoSe2 heterostructure. J Mater Sci 54, 14742–14751 (2019). https://doi.org/10.1007/s10853-019-03963-1
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DOI: https://doi.org/10.1007/s10853-019-03963-1