Abstract
Ultrasonic spray pyrolysis (USP) technique has been used to deposit pure and magnesium (Mg) incorporation Tin Sulphide (SnS:Mg) thin films at 350 °C by varying the Mg impurities concentration (2%, 4%, 6% and 8%). X -ray diffraction patterns confirms the orthorhombic crystal structure of SnS:Mg thin films. Structural parameters such as crystallite size, microstrain and dislocation density were determinated. SEM images displayed the influence affected of SnS films surface morphology by the change of Mg incorporation concentration. The optical band gap energy were determinated by measuring the transmission which showed a low value of 1.59 eV with a strong emission peak of photoluminescence spectra observed at 421 nm for 6% of Mg incorporation concentration. Hall Effect measurement confirm the p-type conductivity of the SnS:Mg film and presented a very low resistivity of 1.58 × 10−2 Ω cm with the high mobility of 21.54 cm2/Vs and very high carrier concentration of 1.47 × 1019 cm−3 for 6 at.% of SnS:Mg thin film. Morevere, FTO/n-SnS2/p-SnS:Mg/Ag heterostructure based solar cells using 6% Mg incorporation concentration was analyzed and their current–voltage characteristic under dark and illumination conditions was investigated.
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The experimental data and analysis scripts supporting the findings of this study on SnS:Mg thin films are available in this article. Additionally, the raw data, including deposition parameters, characterization results, and relevant images, are available in the author’s repository. Access to the raw data is available upon request to the corresponding author, with the understanding that certain proprietary information regarding the thin film fabrication process may be restricted due to intellectual property considerations.
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Hadef, Z., Kamli, K., Akkari, A. et al. In-depth characterization of physical proprieties of SnS:Mg thin films fabricated by ultrasonic spray for solar cell applications. J Mater Sci: Mater Electron 35, 1632 (2024). https://doi.org/10.1007/s10854-024-13370-1
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DOI: https://doi.org/10.1007/s10854-024-13370-1