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The performance of ultraviolet solar-blind detection of p-Si/n-Ga2O3 heterojunctions with/without hole-blocking layer

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Abstract

The wide band gap semiconductor Ga2O3 has become an excellent UV detection material due to its suitable band gap, high crystalline quality and thermal stability. In this paper, the microstructure of Ga2O3 with different thicknesses is characterized and the solar-blind detection performance of Ga2O3/p-Si heterojunctions are further investigated. XRD and UV–VIS demonstrate that Ga2O3 sputtered for 20 min is amorphous with a band gap of 4.98 eV, as the sputtering time increases, Ga2O3 grows along the (002) crystal plane and the band gap increases. XPS reveals that the lattice oxygen content in the Ga2O3 increases with the sputtering time, however, the Ga3+ content reaches a peak in Ga2O3 sputtered for 1.5 h. And the increasing of the binding energy between Ga-O in Ga2O3/p-Si heterojunctions accelerates response speed. Electrical experiments show that the heterojunction consisting of sputtered 1.5 h Ga2O3 and p-Si reaches a higher PDCR, with a value of 6684 at 5.7 V. Meanwhile, the rise and decay time of the heterojunction are 0.13 s and 0.14 s at 0 V, and the decay time gradually increases from 0.1 to 0.7 s with increasing the applied voltage. However, insertion of 20 nm Si-doped Ga2O3 as a hole-blocking layer at the interface of p-Si and Ga2O3 remarkably declines the decay time under various applied biases and causes no obvious damage to the photo current of the heterojunction.

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The data supporting the results of this study can be obtained from the corresponding author according to reasonable requirements, and the data is transparent.

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Funding

This work was supported by the National Natural Science Foundation of China (62204234), Beijing Nova Program (Z211100002121079), and the Natural Science Foundation of Beijing, China (Grant No. 4192016).

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Authors and Affiliations

  1. School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing, 100124, China

    Q. Zhang, H. L. Gao, J. X. Deng, X. Meng, K. Tian, J. W. Xu, L. Kong, L. J. Meng, J. Du, Q. Q. Yang, G. S. Wang, J. H. Meng & X. L. Wang

  2. CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 201899, China

    X. L. Yang

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Professor Deng Jinxiang’s guidance on the details of the experiment and the revision of the paper; others’ experimental support.

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Zhang, Q., Gao, H.L., Deng, J.X. et al. The performance of ultraviolet solar-blind detection of p-Si/n-Ga2O3 heterojunctions with/without hole-blocking layer. J Mater Sci: Mater Electron 35, 1125 (2024). https://doi.org/10.1007/s10854-024-12897-7

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