Abstract
In this note, we study a fractional Poisson–Nernst–Planck equation modeling a semiconductor device. We prove several decay estimates for the Lebesgue and Sobolev norms in one, two and three dimensions. We also provide the first term of the asymptotic expansion as \({t\rightarrow\infty}\).
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Communicated by Nader Masmoudi.
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Granero-Belinchón, R. On a Drift–Diffusion System for Semiconductor Devices. Ann. Henri Poincaré 17, 3473–3498 (2016). https://doi.org/10.1007/s00023-016-0493-6
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DOI: https://doi.org/10.1007/s00023-016-0493-6