Abstract
During the last 20 years the EUV light source development has been driven worldwide to make EUV lithography the next generation process for semiconductor production. This worldwide development is summarized in the first part of this chapter. It is followed by an outline of the Japanese EUV light source development from Gigaphoton which firstly introduced innovating and standard setting source components: In 2003 the CO2 laser driven tin plasma source for EUV generation; In 2007 the high conversion efficiency excitation of the tin plasma with a 1micrometer solid-state pre-pulse laser and the magnetic mitigation of the tin ions; and In 2010, Gigaphoton demonstrated 100 W EUV emission with its Engineering Test Stand (ETS), the first light source developed and based on these system components. The development of the Pilot #1 system for HVM EUV lithography followed. This system demonstrated stable, more than 330 W EUV power at the intermediate focus (IF, clean power in burst) and is based on a 27 kW CO2 laser amplifier system from Mitsubishi Electric (Japan), consisting of one preamplifier and three main amplifiers. This pilot system will soon be available for the EUV lithography market to support the 5 nm node semiconductor high-volume manufacturing. Finally, a brief outline is given of a similar EUV light source developed by Cymer/ASML in 2018.
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Mizoguchi, H., Endo, A., Yanagida, T., Nakarai, H., Oga, T. (2021). EUV Sources. In: Sugioka, K. (eds) Handbook of Laser Micro- and Nano-Engineering. Springer, Cham. https://doi.org/10.1007/978-3-030-63647-0_54
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