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Magnetic Memory and Logic

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Handbook of Magnetism and Magnetic Materials

Abstract

Since the institution of the International Olympic Committee in 1894, the three Latin words “Citius, Altius, and Fortius,” which mean “faster, higher, and stronger,” are the motto of the Olympic Games. Similarly, “faster, denser, and longer” is the motto that could be adopted by the scientific community behind the development of the magnetic memory and logic devices for information technology. The storage density of the magnetic hard drives used as primary memory has seen more than a thousandfold increase since the first application of giant magnetoresistance into the read head around 1997. The integration of memory and logic in the same device, together with progressive miniaturization, is expected to break the energy and time constraints of the classic Neumann architecture. This chapter of magnetic memory and logic focuses on the discussion of using magnetic materials, magnetoresistance, and spin current for information storage and logic applications.

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Acknowledgments

The author acknowledges the funding support of the National Basic Research Programs of China (Grants 2015CB921104 and 2019YFA0308401), National Natural Science Foundation of China (NSFC Grants 11574006 and 11974025), and Strategic Priority Research Program of the Chinese Academy of Sciences (No. XDB28000000).

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Authors and Affiliations

  1. International Center for Quantum Materials, School of Physics, Peking University, Beijing, China

    Wei Han

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  1. Wei Han
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Correspondence to Wei Han .

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  1. School of Physics, Trinity College, Dublin, Ireland

    J. M. D. Coey

  2. Max Planck Institute of Microstructure Physics, Halle (Saale), Germany

    Stuart S.P. Parkin

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Han, W. (2021). Magnetic Memory and Logic. In: Coey, J.M.D., Parkin, S.S. (eds) Handbook of Magnetism and Magnetic Materials. Springer, Cham. https://doi.org/10.1007/978-3-030-63210-6_33

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