Abstract
Magnetron sputtering and optical lithography are standard techniques to prepare magnetic tunnel junctions with lateral dimensions in the micrometer range. Here we present the materials and techniques to deposit the layer stacks, define the structures, and etch the devices. In the end, we obtain tunnel junction devices exhibiting memristive switching for potential use as artificial synapses.
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References
Thomas A (2013) Memristor-based neural networks. J Phys D Appl Phys 46(9):093001. doi:10.1088/0022-3727/46/9/093001
Turel O, Lee J, Ma X et al (2004) Neuromorphic architectures for nanoelectronic circuits. Int J Circ Theor Appl 32(5):277–302. doi:10.1002/cta.282
Chua L (1971) Memristor: the missing circuit element. IEEE Trans Circ Theor 18:507–519
Krzysteczko P, Münchenberger J, Schäfers M et al (2012) The memristive magnetic tunnel junction as a nanoscopic synapse-neuron system. Adv Mater 24:762–766
Afifi A, Ayatollahi A, Raissi F (2009) STDP implementation using memristive nanodevice in CMOS-Nano neuromorphic networks. IEICE Electron Exp 6(3):148–153. doi:10.1587/elex.6.148
Indiveri G, Chicca E, Douglas R (2006) A VLSI array of low-power spiking neurons and bistable synapses with spike-timing dependent plasticity. IEEE Trans Neural Netw 17(1):211–221. doi:10.1109/TNN.2005.860850
Krzysteczko P, Reiss G, Thomas A (2009) Memristive switching of MgO based magnetic tunnel junctions. Appl Phys Lett 95(11):112508. doi:10.1063/1.3224193
Yang JJ, Zhang MX, Strachan JP et al (2010) High switching endurance in TaOx memristive devices. Appl Phys Lett 97(23):232102. doi:10.1063/1.3524521
Strachan JP, Torrezan AC, Medeiros-Ribeiro G et al (2011) Measuring the switching dynamics and energy efficiency of tantalum oxide memristors. Nanotechnology 22(50):505402. doi:10.1088/0957-4484/22/50/505402
Torrezan AC, Strachan JP, Medeiros-Ribeiro G et al (2011) Sub-nanosecond switching of a tantalum oxide memristor. Nanotechnology 22(48):485203. doi:10.1088/0957-4484/22/48/485203
Yakopcic C, Sarangan A, Gao J et al. (2011) TiO2 memristor devices. IEEE National Aerospace & Electronics Conference, July 2011, p 101–104
Pickett MD, Strukov DB, Borghetti JL et al (2009) Switching dynamics in titanium dioxide memristive devices. J Appl Phys 106(7):074508. doi:10.1063/1.3236506
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Niehörster, S., Thomas, A. (2015). Preparation of Ta-O-Based Tunnel Junctions to Obtain Artificial Synapses Based on Memristive Switching. In: Cartwright, H. (eds) Artificial Neural Networks. Methods in Molecular Biology, vol 1260. Springer, New York, NY. https://doi.org/10.1007/978-1-4939-2239-0_16
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DOI: https://doi.org/10.1007/978-1-4939-2239-0_16
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