Molecular — impurity absorption in KC1 for infrared laser windows H. G. LipsonJ. J. LarkinS. S. Mitra OriginalPaper Pages: 1 - 24
The structural and piezoelectric properties of epitaxial AℓN on Aℓ2O3 F. A. PizzarelloJ. E. Coker OriginalPaper Pages: 25 - 36
Metallurgical amd electroluminescence characteristics of vapor-phase and liquid-phase epitaxial junction structures of InxGa1−xAs M. EttenbergC. J. NueseR. E. Enstrom OriginalPaper Pages: 37 - 66
Tl3VS4 as an acousto-optic and surface wave material T. J. IsaacsM. GottliebJ. D. Feichtner OriginalPaper Pages: 67 - 75
The role of ionization coefficient in the operation of avalanche diodes above breakdown P. AntognettiW. G. Oldham OriginalPaper Pages: 77 - 90
Rare-earth-modified Sr0.5Ba0.5Nb2O6, ferroelectric crystals and their applications as infrared detectors S. T. LiuR. B. Maciolek OriginalPaper Pages: 91 - 100
Te and Ge — doping studies in Ga1−xAlxAs A. J. SpringThorpeF. D. KingA. Becke OriginalPaper Pages: 101 - 118
Multi-layer epitaxially grown silicon impatt diodes at millimeter-wave frequencies C. P. WenY. S. ChiangE. J. Denlinger OriginalPaper Pages: 119 - 129
Characterization of GaAs substrates and epitaxial GaAs1−xPx layers by divergent x-ray beam diffraction L. F. DonagheyR. H. Bissinger OriginalPaper Pages: 131 - 158
Bonding and thermal stability of implanted hydrogen in silicon H. J. Stein OriginalPaper Pages: 159 - 174
The influence of oxidation-sirtl etch condition on the stacking fault generation in (111) silicon wafers Y. SugitaT. AoshimaA. Yoshinaka OriginalPaper Pages: 175 - 189