New layer transfers obtained by the SmartCut process H. MoriceauF. FournelC. Mazuré Special Issue Paper Pages: 829 - 835
An anisotropic elasticity model of strain partitioning in epitaxial thin layers Peter WakelandTariq KhraishiDavid Zubia Special Issue Paper Pages: 836 - 841
Gas-cluster ion-beam smoothing of chemo-mechanical-polish processed GaSb(100) substrates L. P. AllenT. G. TetreaultC. Sung Special Issue Paper Pages: 842 - 848
Heterogeneous silicon integration by ultra-high vacuum wafer bonding M. J. KimR. W. Carpenter Special Issue Paper Pages: 849 - 854
Growth of GaN on porous SiC and GaN substrates C. K. InokiT. S. KuanI. Adesida Special Issue Paper Pages: 855 - 860
Improvement of heteroepitaxial growth by the use of twist-bonded compliant substrate: Role of the surface plasticity G. PatriarcheE. Le Bourhis Special Issue Paper Pages: 861 - 867
Crystalline oxide-based devices on silicon substrates K. EisenbeiserR. DroopadD. Penunuri Special Issue Paper Pages: 868 - 871
Layer-transfer process for silicon-on-insulator with improved manufacturability Alexander Usenko Special Issue Paper Pages: 872 - 876
Wafer bonding for III–V on insulator structures S. HayashiD. BrunoM. S. Goorsky Special Issue Paper Pages: 877 - 881
HgCdTe on Si: Present status and novel buffer layer concepts T. D. GoldingO. W. HollandW. P. Kirk Special Issue Paper Pages: 882 - 889
Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes Dong-Soo YoonJae Sung RohHong Koo Baik Special Issue Paper Pages: 890 - 898
Bake stability of CdTe and ZnS on HgCdTe: An x-ray photoelectron spectroscopy study S. K. JhaP. SrivastavaB. B. Gong Special Issue Paper Pages: 899 - 905
Interfacial microstructure evolution in Pb-free solder systems K. Y. LeeM. Li Special Issue Paper Pages: 906 - 912
Determination of carrier-transfer length from side-wall quantum well to quantum wire by micro-photoluminescence scanning Z. -F. LiW. LuC. Jagadish Special Issue Paper Pages: 913 - 916