The growth of GaN on lithium gallate (LiGaO2) substrates for material integration April S. BrownW. Alan DoolittleZ. Dai Special Issue Paper Pages: 894 - 896
Compliant substrates: A comparative study of the relaxation mechanisms of strained films bonded to high and low viscosity oxides K. D. HobartF. J. KubC. K. Inoki Special Issue Paper Pages: 897 - 900
Relaxation enhancing interlayers (REIs) in threading dislocation reduction A. E. RomanovJ. S. Speck Special Issue Paper Pages: 901 - 905
Comparison of GaAs grown on standard Si (511) and compliant SOI (511) M. L. SeafordD. H. TomichW. I. Wang Special Issue Paper Pages: 906 - 908
Room temperature wafer bonding of silicon, oxidized silicon, and crystalline quartz Stefan BengtssonPetra Amirfeiz Special Issue Paper Pages: 909 - 915
Transfer of n-type GaSb onto GaAs substrate by hydrogen implantation and wafer bonding Y. ZhengP. D. MoranM. Nastasi Special Issue Paper Pages: 916 - 920
SiGe MOSFET structures on silicon-on-sapphire substrates grown by ultra-high vacuum chemical vapor deposition P. M. MooneyJ. O. ChuJ. A. Ott Special Issue Paper Pages: 921 - 927
Transfer of semiconductor and oxide films by wafer bonding and layer cutting Qin-Yi TongLi-Juan HuangUlich M. Gösele Special Issue Paper Pages: 928 - 933
Lattice-mismatched InGaAs layers grown by OMVPE on GaAs based compliant substrates K. VanhollebekeI. MoermanP. Demeester Special Issue Paper Pages: 933 - 939
Comparison of InGaSb/InAs superlattice structures grown by MBE on GaSb, GaAs, and compliant GaAs substrates D. H. TomichK. G. EyinkC. H. Lin Special Issue Paper Pages: 940 - 943
Strain relaxation in InGaAs lattice engineered substrates P. ChavarkarS. K. MathisU. K. Mishra Special Issue Paper Pages: 944 - 949
Low-dislocation relaxed SiGe grown on an effective compliant substrate Y. H. LuoJ. L. LiuK. N. Tu Special Issue Paper Pages: 950 - 955
Engineering phase formation thermo-chemistry for crystal growth of homogeneous ternary and quaternary III–V compound semiconductors from melts P. S. DuttaT. R. Miller Special Issue Paper Pages: 956 - 963
Pd/Sb(Zn) and Pd/Ge(Zn) ohmic contacts on p-type indium gallium arsenide: The employment of the solid phase regrowth principle to achieve optimum electrical and metallurgical properties P. ResselP. H. HaoH. L. Hartnagel Special Issue Paper Pages: 964 - 972
Er-doped polycrystalline silicon for light emission at λ=1.54 µm Thomas D. ChenAnuradha M. AgarwalLionel C. Kimerling Special Issue Paper Pages: 973 - 978
Complex permeability studies of Li1+ substituted Cu-Zn ferrites S. S. SuryavanshiS. M. KabburS. R. Sawant Special Issue Paper Pages: 979 - 983
Optimum antireflection coatings for heteroface AlGaAs/GaAs solar cells—Part I: The influence of window layer oxidation Ignacio Rey-StolleCarlos Algora Special Issue Paper Pages: 984 - 991
Optimum antireflection coatings for heteroface AlGaAs/GaAs solar cells—Part II: The influence of uncertainties in the parameters of window and antireflection coatings Ignacio Rey-StolleCarlos Algora Special Issue Paper Pages: 992 - 999
Identification of prismatic slip bands in 4H SiC boules grown by physical vapor transport Seoyong HaNoel T. NuhferMarek Skowronski Letter Pages: L5 - L8