New materials and structures for photovoltaics Alex ZungerS. WagnerP. M. Petroff Special Issue Paper Pages: 3 - 16
Research opportunities in polycrystalline compound solar cells Richard H. BubeKim W. Mitchell Special Issue Paper Pages: 17 - 25
Hydrogenated amorphous semiconductors W. PaulR. A. StreetS. Wagner Special Issue Paper Pages: 39 - 48
Growth of photovoltaic semiconductors E. YablonovitchG. B. StringfellowJ. E. Greene Special Issue Paper Pages: 49 - 55
Research opportunities in crystalline III–V photovoltaics Timothy J. CouttsMark S. Lundstrom Special Issue Paper Pages: 57 - 64
Opportunities in silicon photovoltaics and defect control in photovoltaic materials A. RohatgiE. R. WeberL. C. Kimerling Special Issue Paper Pages: 65 - 72
Highly conductive buried n+ layers in lnp:fe created by MeV energy Si, S, and Si/S implantation for application to microwave devices Jayadev VellankiRavi K. NadellaMulpuri V. Rao Regular Issue Paper Pages: 73 - 80
In-Situ generated arsine radicals for gallium arsenide homoepitaxy B. G. PihlstromL. R. ThompsonG. J. Collins Regular Issue Paper Pages: 81 - 86
Tertiaybutyldimethylantimony for GaSb growth C. H. ChenC. T. ChiuG. B. Stringfellow Regular Issue Paper Pages: 87 - 91
Electron microscopy and energy loss study of low temperature plasma deposited oxide on a CZ grown Si substrate G. L. Waytena Regular Issue Paper Pages: 93 - 97
Enhanced radiative absorption of thin, heavily beryllium-doped GaAs films W. E. HokeD. G. WeirP. S. Lyman Regular Issue Paper Pages: 99 - 104
The dissolution mechanism of oxide precipitates in czochralski silicon degenerately doped with boron during high temperature annealing W. Wijaranakula Regular Issue Paper Pages: 105 - 110
Effect of semiconductor growth method and bulk doping on fermi level stabilization for aluminum and gold contacts on n- and p-GaAs(100) I. M. VitomirovA. RaisanenJ. M. Woodall Regular Issue Paper Pages: 111 - 117
Hydrogen sulfide plasma passivation of indium phosphide J. S. HermanF. L. Terry Regular Issue Paper Pages: 119 - 124
Characterization of germanium implanted Si1−xGex layer Ashawant GuptaCarmen CookTakashi Tokuyama Regular Issue Paper Pages: 125 - 128
Rapid thermal annealing of magnesium implanted GaAs-GaAIAs heterostructures experimental and simulated distributions K. KetataR. DebrieM. Ketata Regular Issue Paper Pages: 129 - 134
Analysis of rapid thermal annealings of boron and arsenic in polysilicon emitter structures C. GontrandA. MerabetJ. P. Vallard Regular Issue Paper Pages: 135 - 141
A study of processed electronic materials containing inhomogeneous refractive index profiles Gustavo E. AizenbergPieter L. SwartBeatrys M. Lacquet Regular Issue Paper Pages: 143 - 149
Deep levels in undoped Si1−xGex grown by gas-source molecular beam epitaxy S. H. LiP. K. BhattacharyaW. C. Mitchel Letter Pages: 151 - 153