18th Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP XVIII)
In this topical collection (23 articles)
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Topical Collection: 18th Conference on Defects (DRIP XVIII)
Using Cross-Sectional Cathodoluminescence to Visualize Process-Induced Defects in GaN-Based High Electron Mobility Transistors
Ryuichi Sugie, Tomoyuki Uchida, Koji Matsumura… Pages 5085-5090 -
Topical Collection: 18th Conference on Defects (DRIP XVIII)
Electrical Activity of Crystal Defects in Multicrystalline Si
A. Moretón, M. M. Jiménez, S. Dadgostar, O. Martínez… Pages 5091-5096 -
Topical Collection: 18th Conference on Defects (DRIP XVIII)
Vacancy Clustering in Dislocation-Free High-Purity Germanium
Kevin-Peter Gradwohl, Alexander Gybin… Pages 5097-5103 -
Topical Collection: 18th Conference on Defects (DRIP XVIII)
A Comparison of Defects Between InAs Single Crystals Grown by LEC and VGF Methods
Guiying Shen, Youwen Zhao, Jing Sun, Jingming Liu… Pages 5104-5109 -
Topical Collection: 18th Conference on Defects (DRIP XVIII)
Recognition and Imaging of Point Defect Diffusion, Recombination, and Reaction During Growth of Czochralski-Silicon Crystals
Masataka Hourai, Eiichi Asayama, Hideshi Nishikawa… Pages 5110-5119 -
Topical Collection: 18th Conference on Defects (DRIP XVIII)
Characterization of Silicon Crystals Grown from Melt in a Granulate Crucible
K. Dadzis, R. Menzel, U. Juda, K. Irmscher, C. Kranert… Pages 5120-5132 -
Topical Collection: 18th Conference on Defects (DRIP XVIII)
Influence of Crystallographic Orientation on Schottky Barrier Formation in Gallium Oxide
Roman Yatskiv, Stanislav Tiagulskyi, Jan Grym Pages 5133-5137 -
Topical Collection: 18th Conference on Defects (DRIP XVIII)
Optimization of the Epitaxial Growth of Undoped GaN Waveguides in GaN-Based Laser Diodes Evaluated by Photoluminescence
C. Netzel, V. Hoffmann, S. Einfeldt, M. Weyers Pages 5138-5143 -
Topical Collection: 18th Conference on Defects (DRIP XVIII)
Crystallinity Evaluation and Dislocation Observation for an Aluminum Nitride Single-Crystal Substrate on a Wafer Scale
Yongzhao Yao, Yoshihiro Sugawara, Yukari Ishikawa… Pages 5144-5153 -
Topical Collection: 18th Conference on Defects (DRIP XVIII)
Alloy Stability of Ge1−xSnx with Sn Concentrations up to 17% Utilizing Low-Temperature Molecular Beam Epitaxy
Daniel Schwarz, Hannes S. Funk, Michael Oehme… Pages 5154-5160 -
Topical Collection: 18th Conference on Defects (DRIP XVIII)
Photoelastic Characterization of Residual Strain Distribution in Commercial Off-Axis SiC Substrates
Masayuki Fukuzawa, Kazuki Kanamoto Pages 5161-5166 -
Topical Collection: 18th Conference on Defects (DRIP XVIII)
4O10Cd Clustering in ZnBVI-Rich CdxZn1−xOyB 1−y VI (BVI = S, Se, Te) Highly Lattice-Mismatched Alloys
Vyacheslav A. Elyukhin Pages 5167-5172 -
Topical Collection: 18th Conference on Defects (DRIP XVIII)
Comparative Study of Optical and Electrical Properties of Grown-In and Freshly Introduced Dislocations in GaN by SEM Methods
P. S. Vergeles, E. B. Yakimov, V. I. Orlov Pages 5173-5177 -
Topical Collection: 18th Conference on Defects (DRIP XVIII)
Charging Effects in Al-SiO2-p-Si Structures After Low-Energy Electron Beam Irradiation
P. S. Vergeles, Yu. O. Kulanchikov, E. B. Yakimov Pages 5178-5183 -
Topical Collection: 18th Conference on Defects (DRIP XVIII)
A Cathodoluminescence Study on the Diffusion Length in AlGaInP/InGaP/AlInP Solar Cell Heterostructures
Shabnam Dadgostar, Cantia Belloso Casuso, Oscar Martínez… Pages 5184-5189 -
Topical Collection: 18th Conference on Defects (DRIP XVIII)
Three-Dimensional Observation of Internal Defects in a β-Ga2O3 (001) Wafer Using the FIB–SEM Serial Sectioning Method
Kenichi Ogawa, Naoya Ogawa, Ryo Kosaka… Pages 5190-5195 -
Topical Collection: 18th Conference on Defects (DRIP XVIII)
Electron-Beam-Induced Current Study of Dislocations and Leakage Sites in GaN Schottky Barrier Diodes
Jun Chen, Wei Yi, Ashutosh Kumar, Akio Iwanade… Pages 5196-5204 -
Topical Collection: 18th Conference on Defects (DRIP XVIII)
Comparative Study of the Photoelastic Anisotropy of Si and GaAs
Martin Herms, Gert Irmer, Gregor Kupka, Nando Kirchner… Pages 5205-5212 -
Topical Collection: 18th Conference on Defects (DRIP XVIII)
Microstructure of Stacking Fault Complex/Carrot Defects at Interface Between 4H-SiC Epitaxial Layers and Substrates
Hideki Sako, Kenji Kobayashi, Kentaro Ohira… Pages 5213-5218 -
Topical Collection: 18th Conference on Defects (DRIP XVIII)
Cathodoluminescence Study of Dislocations in Step-Graded InGaP Buffer Layers of Metamorphic Single-Junction InGaAs Solar Cells
A. Ogura, W. Yi, J. Chen, H. Suzuki, M. Imaizumi Pages 5219-5225
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