Structural defect generation and band-structure features in the HfNi1 − x Co x Sn semiconductor V. A. RomakaP. RoglA. M. Goryn Electronic Properties of Semiconductors 02 August 2015 Pages: 985 - 991
Emission intensity of the λ = 1.54 μm line in ZnO films grown by magnetron sputtering, diffusion doped with Ce, Yb, Er M. M. MezdroginaM. V. EremenkoE. I. Terukov Spectroscopy, Interaction with Radiation 02 August 2015 Pages: 992 - 999
Molecular beam epitaxy of ZnSSe/CdSe short-period superlattices for III–V/II–VI multijunction solar cells S. V. SorokinS. V. GroninS. V. Ivanov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 02 August 2015 Pages: 1000 - 1006
On the shift of the electroluminescence spectra of In x Ga1 − x N/GaN structures with various indium contents and various substrate materials caused by the stark effect and mechanical stresses V. P. VeleschukA. I. VlasenkoV. V. Borshch Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 02 August 2015 Pages: 1007 - 1011
Deep centers in TiO2-Si structures V. M. KalyginaYu. S. PetrovaS. Yu. Tsupiy Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 02 August 2015 Pages: 1012 - 1018
Al x Ga1 − x As/GaAs(100) hetermostructures with anomalously high carrier mobility P. V. SeredinD. L. GoloshchapovA. V. Popov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 02 August 2015 Pages: 1019 - 1024
Structural and photoluminescent properties of nanowires formed by the metal-assisted chemical etching of monocrystalline silicon with different doping level V. A. GeorgobianiK. A. GoncharV. Yu. Timoshenko Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 02 August 2015 Pages: 1025 - 1029
Improvement in the degradation resistance of silicon nanostructures by the deposition of diamond-like carbon films N. I. KlyuiM. A. SemenenkoWei Han Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 02 August 2015 Pages: 1030 - 1034
Capacitance-voltage characteristics of (Al/Ti)/Al2O3/n-GaN MIS structures P. A. IvanovA. S. PotapovE. V. Osachev Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 02 August 2015 Pages: 1035 - 1038
Study of a MHEMT heterostructure with an In0.4Ga0.6As channel MBE-grown on a GaAs substrate using reciprocal space mapping A. N. AleshinA. S. BugaevO. A. Ruban Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 02 August 2015 Pages: 1039 - 1044
Degradation of the electrical characteristics of MOS structures with erbium, gadolinium, and dysprosium oxides under the effect of an electric field M. B. ShalimovaN. V. Sachuk Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 02 August 2015 Pages: 1045 - 1051
Investigation of microcrystalline silicon by the small-angle X-ray-scattering technique M. D. SharkovM. E. BoikoS. G. Konnikov Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 02 August 2015 Pages: 1052 - 1056
Effect of the interaction conditions of the probe of an atomic-force microscope with the n-GaAs surface on the triboelectrization phenomenon A. V. BaklanovA. A. GutkinP. N. Brunkov Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 02 August 2015 Pages: 1057 - 1061
Thermoelectric transport in epitaxial graphene on a size-quantized substrate Z. Z. AlisultanovN. A. Mirzegasanova Carbon Systems 02 August 2015 Pages: 1062 - 1068
GaSb-based photovoltaic laser-power converter for the wavelength λ ≈ 1550 nm V. P. KhvostikovS. V. SorokinaN. Kh. Timoshina Physics of Semiconductor Devices 02 August 2015 Pages: 1079 - 1082
Optical-cell model based on the lasing competition of mode structures with different Q-factors in high-power semiconductor lasers A. A. PodoskinI. S. ShashkinI. S. Tarasov Physics of Semiconductor Devices 02 August 2015 Pages: 1083 - 1089
Effect of the bimodality of a QD array on the optical properties and threshold characteristics of QD lasers A. M. NadtochiyS. A. MintairovA. E. Zhukov Physics of Semiconductor Devices 02 August 2015 Pages: 1090 - 1094
Site-Controlled Growth of Single InP QDs A. S. VlasovA. M. MintairovR. A. Babunts Fabrication, Treatment, and Testing of Materials and Structures 02 August 2015 Pages: 1095 - 1098
On the generation of charge-carrier recombination centers in the sapphire substrates of silicon-on-sapphire structures P. A. AleksandrovN. E. BelovaS. G. Shemardov Fabrication, Treatment, and Testing of Materials and Structures 02 August 2015 Pages: 1099 - 1103
Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer N. A. BaidakovaA. I. BobrovZ. F. Krasilnik Fabrication, Treatment, and Testing of Materials and Structures 02 August 2015 Pages: 1104 - 1110
Determination of the technological growth parameters in the InAs-GaAs system for the MOCVD synthesis of “Multimodal” InAs QDs R. A. SaliiS. A. MintairovN. A. Kalyuzhnyy Fabrication, Treatment, and Testing of Materials and Structures 02 August 2015 Pages: 1111 - 1118