Spin-transfer torque and specific features of magnetic-state switching in vacuum tunnel nanostructures G. D. DeminA. F. PopkovN. A. Dyuzhev Basic Research 17 December 2015 Pages: 1679 - 1683
Zinc diffusion upon isovalent substitution in gallium phosphide E. N. Vigdorovich Materials for Electronic Engineering 17 December 2015 Pages: 1684 - 1688
Charge-carrier transport mechanisms in composites containing carbon-nanotube inclusions D. A. UsanovA. V. Skripal’A. V. Romanov Materials for Electronic Engineering 17 December 2015 Pages: 1689 - 1694
On the size-dependent magnetism and all-optical magnetization switching of transition-metal silicide nanostructures G. I. GlushkovA. V. TuchinL. A. Bityutskaya Materials for Electronic Engineering 17 December 2015 Pages: 1695 - 1697
Spin valves based on Mn75Ir25 antiferromagnet with controllable functional parameters M. A. MilyaevL. I. NaumovaV. V. Ustinov Nanotechnology 17 December 2015 Pages: 1698 - 1701
Modeling of the structural fragments of substances with nanoscale dispersion S. V. Pishchanskiy Materials for Electronic Engineering 17 December 2015 Pages: 1702 - 1709
Luminescence properties of Si-containing porous matrix–PbS nanoparticle systems S. A. TarasovO. A. AleksandrovaP. G. Travkin Materials for Electronic Engineering 17 December 2015 Pages: 1710 - 1713
Study of the structure of a thin aluminum layer on the vicinal surface of a gallium arsenide substrate by high-resolution electron microscopy M. V. LovyginN. I. BorgardtA. V. Tsikunov Materials for Electronic Engineering 17 December 2015 Pages: 1714 - 1717
Analytical approach to calculating the effective dielectric characteristics of heterogeneous textured materials with randomly shaped inclusions M. I. ZavgorodnyayaI. V. LavrovA. G. Fokin Materials for Electronic Engineering 17 December 2015 Pages: 1718 - 1726
A study of the effect of the structure of plasma-chemical silicon nitride on its masking properties V. I. GarmashV. I. EgorkinS. Yu. Shapoval Microelectronic and Nanoelectronic Technology 17 December 2015 Pages: 1727 - 1730
Study of the technology of the plasma nanostructuring of silicon to form highly efficient emission structures V. A. GalperinE. P. KitsyukA. A. Shamanaev Microelectronic and Nanoelectronic Technology 17 December 2015 Pages: 1731 - 1734
Study of silicon strip waveguides with diffraction gratings and photonic crystals tuned to a wavelength of 1.5 µm M. Yu. BarabanenkovA. F. VyatkinO. V. Trofimov Microelectronic Devices and Systems 17 December 2015 Pages: 1735 - 1738
Magnetic-field sensors based on anisotropic magnetoresistive thin-film structures for operation in a wide temperature range N. A. DjuzhevN. S. MazurkinM. Yu. Chinenkov Microelectronic Devices and Systems 17 December 2015 Pages: 1739 - 1742
Study of modification methods of probes for critical-dimension atomic-force microscopy by the deposition of carbon nanotubes O. A. AgeevAl. V. BykovO. G. Tsukanova Nanotechnology 17 December 2015 Pages: 1743 - 1748
Fast-response biological sensors based on single-layer carbon nanotubes modified with specific aptamers K. F. AkhmadishinaI. I. BobrinetskiyR. D. Aidarkhanov Nanotechnology 17 December 2015 Pages: 1749 - 1753