Bose condensation of exciton polaritons in microcavities V. B. Timoffeev Review 06 July 2012 Pages: 843 - 860
Role of intrinsic defects in splitting the energy spectra of charge carriers in Ag2Te M. B. JafarovF. F. AlievA. A. Saddinova Electronic Properties of Semiconductors 06 July 2012 Pages: 861 - 865
Resonance states, heavy quasiparticles, and the thermoelectric figure of merit of IV–VI materials L. V. ProkofievaYu. I. RavichA. A. Shabaldin Electronic Properties of Semiconductors 06 July 2012 Pages: 866 - 872
Diamagnetic exciton polariton in the interband magnetooptics of semiconductors R. P. SeisyanG. M. SavchenkoN. S. Averkiev Electronic Properties of Semiconductors 06 July 2012 Pages: 873 - 877
Study of platinum impurity atom state in vitreous arsenic selenide G. A. BordovskyA. V. MarchenkoH. M. Ali Electronic Properties of Semiconductors 06 July 2012 Pages: 878 - 881
Evidence of the third (A +) level of the mercury vacancy in Cd x Hg1 − x Te S. G. Gassan-zadeM. V. StrikhaG. A. Shepelskii Electronic Properties of Semiconductors 06 July 2012 Pages: 882 - 886
Features of conductivity of the intermetallic semiconductor n-ZrNiSn heavily doped with a Bi donor impurity V. A. RomakaP. RoglA. M. Horyn Electronic Properties of Semiconductors 06 July 2012 Pages: 887 - 893
Autosolitons in low-resistivity indium antimonide and tellurium single crystals in a magnetic field I. K. KamilovA. A. StepurenkoA. E. Gummetov Electronic Properties of Semiconductors 06 July 2012 Pages: 894 - 897
Effect of alkali metals on the electronic properties of grain boundaries on a polycrystalline silicon surface L. O. Olimov Electronic Properties of Semiconductors 06 July 2012 Pages: 898 - 900
Intensity of emission from intracenter 4f-transitions in a-Si:H, ZnO, and GaN films doped with rare-earth ions M. M. MezdroginaM. V. EremenkoYu. V. Kozhanova Surfaces, Interfaces, and Thin Films 06 July 2012 Pages: 901 - 912
On the possibility of the experimental determination of spontaneous polarization for silicon carbide polytypes S. Yu. DavydovA. A. LebedevO. V. Posrednik Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 July 2012 Pages: 913 - 916
Picosecond photoluminescence dynamics in an InGaAs/GaAs quantum-well heterostructure V. Ya. AleshkinA. A. DubinovS. V. Morozov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 July 2012 Pages: 917 - 920
Changes in the spectra of picosecond stimulated emission from GaAs accompanied by signs of electron-phonon interaction N. N. AgeevaI. L. BronevoiA. N. Krivonosov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 July 2012 Pages: 921 - 928
Evaluation of the conversion efficiency of thin-film single-junction (a-Si:H) and tandem (μc-Si:H + a-Si:H) solar cells by analysis of the experimental dark and load current-voltage (I–V) characteristics A. A. AndreevV. M. AndreevE. I. Terukov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 July 2012 Pages: 929 - 936
Structures with vertically stacked Ge/Si quantum dots for logical operations Yu. N. MorokovM. P. FedorukA. V. Nenashev Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 July 2012 Pages: 937 - 942
Influence of the composition on the electrical properties of amorphous chalcogenides AgGe1 + x As1 − x S3 O. L. KheifetsE. F. ShakirovL. L. Nugaeva Amorphous, Vitreous, and Organic Semiconductors 06 July 2012 Pages: 943 - 947
Influence of irradiation with neutrons on the characteristics of the voltage terminating structure in silicon radiation detectors V. K. EreminN. N. FadeevaE. I. Terukov Physics of Semiconductor Devices 06 July 2012 Pages: 948 - 956
Synthesis and characterization of the as-deposited Cd1 − x Pb x S thin films prepared by spray pyrolysis technique M. KamruzzamanR. DuttaJ. Podder Fabrication, Treatment, and Testing of Materials and Structures 06 July 2012 Pages: 957 - 961
Effect of the tin content on the composition and optical and electrical properties of ITO films deposited onto silicon and glass by ultrasonic spray pyrolysis G. G. UntilaT. N. KostM. A. Timofeyev Fabrication, Treatment, and Testing of Materials and Structures 06 July 2012 Pages: 962 - 968