Fractal character of the distribution of surface potential irregularities in epitaxial n-GaAs (100) N. A. TorkhovV. G. Bozhkov Atomic Structure and Nonelectronic Properties of Semiconductors 06 May 2009 Pages: 551 - 556
Redistribution of Al in implanted SiC layers as a result of thermal annealing O. V. AleksandrovE. V. Kalinina Atomic Structure and Nonelectronic Properties of Semiconductors 06 May 2009 Pages: 557 - 562
Electronic structure of Zn-substituted germanium clathrates N. A. BorshchN. S. PereslavtsevaS. I. Kurganskii Electronic and Optical Properties of Semiconductors 06 May 2009 Pages: 563 - 567
Optical and paramagnetic properties of synthetic diamond crystals irradiated with electrons and annealed N. A. PoklonskiG. A. GusakovN. M. Lapchuk Electronic and Optical Properties of Semiconductors 06 May 2009 Pages: 568 - 576
Persistent photoconductivity in MgZnO alloys A. Y. PolyakovN. B. SmirnovA. I. Belogorokhov Electronic and Optical Properties of Semiconductors 06 May 2009 Pages: 577 - 580
Photocurrent spectra in parametrical form and their discrete wavelet decomposition for CdZnTe alloys A. V. ButV. P. MygalA. S. Phomin Electronic and Optical Properties of Semiconductors 06 May 2009 Pages: 581 - 585
Laplace-DLTS method with the regularization parameter chosen from the L curve M. N. LevinA. V. TatarintzevA. E. Akhkubekov Electronic and Optical Properties of Semiconductors 06 May 2009 Pages: 586 - 589
Optical properties of the Si-doped GaN/Al2O3 films N. S. ZayatsP. O. GentsarI. B. Yanchuk Semiconductor Structures, Interfaces, and Surfaces 06 May 2009 Pages: 590 - 593
Dislocation electrical conductivity of synthetic diamond films S. N. SamsonenkoN. D. Samsonenko Semiconductor Structures, Interfaces, and Surfaces 06 May 2009 Pages: 594 - 598
Specific features of solid-phase recrystallization of silicon-on-sapphire structures amorphized by oxygen ions P. A. AleksandrovK. D. DemakovYu. Yu. Kuznetsov Semiconductor Structures, Interfaces, and Surfaces 06 May 2009 Pages: 599 - 601
Mechanism of forward current transport in modified-surface Au-CdTe photodiodes V. P. MakhnijYu. N. BojkoN. V. Skrypnyk Semiconductor Structures, Interfaces, and Surfaces 06 May 2009 Pages: 602 - 603
Nonlinear thermopower in bipolar semiconductor samples A. Konin Semiconductor Structures, Interfaces, and Surfaces 06 May 2009 Pages: 604 - 607
Structure and properties of Cd x Hg1−x Te-metal contacts V. I. Stafeev Semiconductor Structures, Interfaces, and Surfaces 06 May 2009 Pages: 608 - 611
Effect of annealing on the effective barrier height and ideality factor of nickel Schottky contacts to 4H-SiC A. S. PotapovP. A. IvanovT. P. Samsonova Semiconductor Structures, Interfaces, and Surfaces 06 May 2009 Pages: 612 - 616
High-frequency conductivity of a thin cylindrical semiconductor wire at arbitrary temperatures I. A. KuznetsovaA. A. YushkanovR. R. Khadchukaev Low-Dimensional Systems 06 May 2009 Pages: 617 - 623
Thermoelectric properties of symmetric and asymmetric double quantum well structures I. V. Sur Low-Dimensional Systems 06 May 2009 Pages: 624 - 628
Width of the excitonic absorption line in Al x Ga1 − x as alloys M. S. MarkosovR. P. Seisyan Low-Dimensional Systems 06 May 2009 Pages: 629 - 634
Anomalous spin splitting of electrons in type-II InSb quantum dots in InAs Ya. V. Terent’evO. G. LyublinskayaS. V. Ivanov Low-Dimensional Systems 06 May 2009 Pages: 635 - 639
Photoconductivity of organic polymer films doped with porous silicon nanoparticles and ionic polymethine dyes N. A. DavidenkoV. A. SkrichevskyE. V. Mokrinskaya Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 06 May 2009 Pages: 640 - 643
Current flow and potential efficiency of solar cells based on GaAs and GaSb p-n junctions V. M. AndreevV. V. EvstropovV. P. Khvostikov Physics of Semiconductor Devices 06 May 2009 Pages: 644 - 651
Mechanisms of negative resistivity and generation of terahertz radiation in a short-channel In0.53Ga0.47As/In0.52Al0.48As transistor M. L. OrlovL. K. Orlov Physics of Semiconductor Devices 06 May 2009 Pages: 652 - 661
Emission distribution in GaInAsSb/GaSb flip-chip diodes A. L. ZakgeimN. D. Il’inskayaA. A. Shlenskii Physics of Semiconductor Devices 06 May 2009 Pages: 662 - 667
Solar cells based on gallium antimonide V. M. AndreevS. V. SorokinaM. Z. Shvarts Physics of Semiconductor Devices 06 May 2009 Pages: 668 - 671
Light-emitting diodes of “Warm” white luminescence on the basis of p-n heterostructures of the InGaN/AlGaN/GaN type coated with phosphors made of yttrium-gadolinium garnets N. P. SoshchinN. A. GalchinaA. E. Yunovich Physics of Semiconductor Devices 06 May 2009 Pages: 672 - 676
Self-correction of field-effect transistor characteristics in the mode of spontaneous space-charge ion polarization of gate oxide A. G. ZhdanV. G. NaryshkinaG. V. Chucheva Physics of Semiconductor Devices 06 May 2009 Pages: 677 - 679
Quantum dot semiconductor lasers of the 1.3 μm wavelength range with high temperature stability of the lasing wavelength (0.2 nm/K) L. Ya. KarachinskyI. I. NovikovD. Bimberg Physics of Semiconductor Devices 06 May 2009 Pages: 680 - 684
Low-temperature production of silicon carbide films of different polytypes A. V. SemenovV. M. PuzikovM. V. Dobrotvorskaya Fabrication, Treatment, and Testing of Materials and Structures 06 May 2009 Pages: 685 - 689