Potentialities and basic principles of controlling the plastic relaxation of GeSi/Si and Ge/Si films with stepwise variation in the composition Yu. B. BolkhovityanovA. K. GutakovskiiL. V. Sokolov Review 05 February 2011 Pages: 1 - 20
The linear stage of evolution of electron-hole avalanches in semiconductors A. S. Kyuregyan Electronic and Optical Properties of Semiconductors 05 February 2011 Pages: 21 - 28
Optical spectroscopy of free excitons in a CuInS2 chalcopyrite semiconductor compound A. V. MudryiA. V. IvanyukovichA. Saad Electronic and Optical Properties of Semiconductors 05 February 2011 Pages: 29 - 33
Electrical properties of proton-irradiated CdSnAs2 V. N. BrudnyiT. V. Vedernikova Electronic and Optical Properties of Semiconductors 05 February 2011 Pages: 34 - 37
Dependence of the band bending at the AgBr-AgI microcontact interface on the shape and size of the heterogeneous system A. V. KhaneftA. S. PoplavnoiL. V. Sotnikova Semiconductor Structures, Interfaces, and Surfaces 05 February 2011 Pages: 38 - 42
Sodium-peak splitting in dynamic current-voltage characteristics of convective ion currents in metal-oxide-semiconductor structures S. G. DmitrievYu. V. Markin Semiconductor Structures, Interfaces, and Surfaces 05 February 2011 Pages: 43 - 51
Deep levels and electron transport in AlGaN/GaN heterostructures I. V. AntonovaV. I. PolyakovK. S. Zhuravlev Semiconductor Structures, Interfaces, and Surfaces 05 February 2011 Pages: 52 - 58
Metal-to-semiconductor emission of hot electrons excited on catalytic reaction V. F. KharlamovA. V. KostinF. V. Kharlamov Semiconductor Structures, Interfaces, and Surfaces 05 February 2011 Pages: 59 - 66
Radiative recombination channels in Si/Si1 − x Ge x nanostructures Yu. A. BerashevichA. S. PanfilenokV. E. Borisenko Low-Dimensional Systems 05 February 2011 Pages: 67 - 73
In situ study of the formation kinetics of InSb quantum dots grown in an InAs(Sb) matrix A. N. SemenovO. G. LyublinskayaS. V. Ivanov Low-Dimensional Systems 05 February 2011 Pages: 74 - 79
Limiting values of the quality factor of thermoelectric composites A. A. SnarskiiM. I. ZhenirovskiiI. V. Bezsudnov Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 05 February 2011 Pages: 80 - 85
High-temperature nuclear-detector arrays based on 4 H-SiC ion-implantation-doped p +-n junctions E. V. KalininaN. B. StrokanR. R. Yafaev Physics of Semiconductor Devices 05 February 2011 Pages: 86 - 91
Reconstruction of the potential profile in an insulating layer using current-voltage characteristics of tunneling MIS diodes E. I. GoldmanA. G. ZhdanM. V. Chernyaev Physics of Semiconductor Devices 05 February 2011 Pages: 92 - 98
The sandwich InGaAs/GaAs quantum dot structure for IR photoelectric detectors L. D. MoldavskayaN. V. VostokovV. I. Shashkin Physics of Semiconductor Devices 05 February 2011 Pages: 99 - 103
Contribution of Auger recombination to saturation of the light-current characteristics in high-power laser diodes (λ = 1.0–1.9 m m) A. V. LyutetskiĭK. S. BorshchevI. S. Tarasov Physics of Semiconductor Devices 05 February 2011 Pages: 104 - 111
Injection-based photodetectors I. M. VikulinSh. D. KurmashevV. I. Stafeev Physics of Semiconductor Devices 05 February 2011 Pages: 112 - 127