Calculation of the size-distribution function for quantum dots at the kinetic stage of growth V. G. Dubrovskiĭ Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1123 - 1130
Correlation dependences in infrared spectra of metal phthalocyanines A. V. ZiminovS. M. RamshT. A. Yurre Electronic and Optical Properties of Semiconductors Pages: 1131 - 1136
Fabrication and microwavemicrowave photoconductivity of CdSe semiconductor films Yu. V. MetelevaG. F. Novikov Electronic and Optical Properties of Semiconductors Pages: 1137 - 1144
Two series of “dislocation” photoluminescence bands in cadmium telluride crystals N. I. TarbaevG. A. Shepel’skii Electronic and Optical Properties of Semiconductors Pages: 1145 - 1150
Magnetic ordering in crystalline Si implanted with Co ions with intermediate doses N. A. PoklonskiĭN. M. LapchukA. O. Korobko Electronic and Optical Properties of Semiconductors Pages: 1151 - 1154
Investigation of the effect of oxygen on the cathodoluminescence spectra and band gap of the ZnSxSe1-x alloy N. K. MorozovaI. A. KaretnikovV. B. Ikonnikov Electronic and Optical Properties of Semiconductors Pages: 1155 - 1161
Optical study of resonant states in GaN x As1−x A. A. GutkinP. N. BrunkovL. Eaves Electronic and Optical Properties of Semiconductors Pages: 1162 - 1164
Effect of the levels of intrinsic defects in the CdP2 band gap on electrical characteristics of corresponding structures with the Schottky barrier I. G. StamovD. V. Tkachenko Semiconductor Structures, Interfaces, and Surfaces Pages: 1165 - 1172
The mechanism of current flow in an alloyed In-GaN ohmic contact T. V. BlankYu. A. Gol’dbergE. A. Posse Semiconductor Structures, Interfaces, and Surfaces Pages: 1173 - 1177
Concentration-elastic-stress instabilities in the distribution of ions and neutral particles in the insulator layer at the semiconductor surface E. I. Gol’dman Semiconductor Structures, Interfaces, and Surfaces Pages: 1178 - 1187
Temperature dependence of photoluminescence of CdS nanoclusters formed in the Langmuir-Blodgett film matrix E. A. BagaevK. S. ZhuravlevL. L. Sveshnikova Low-Dimensional Systems Pages: 1188 - 1192
Photoluminescence of erbium ions in heterostructures with silicon nanocrystals D. M. ZhigunovO. A. ShalyginaM. Zacharias Low-Dimensional Systems Pages: 1193 - 1197
Electrical properties and photoluminescence of SiOx layers with Si nanocrystals in relation to the SiOx composition I. V. AntonovaM. B. GulyaevJ. Jedrzejewski Low-Dimensional Systems Pages: 1198 - 1203
Simulation of capacitance-voltage characteristics of heterostructures with quantum wells using a self-consistent solution of the Schrödinger and Poisson equations V. I. Zubkov Low-Dimensional Systems Pages: 1204 - 1208
Nondiffusive weak localization in two-dimensional systems with spin-orbit splitting of the spectrum M. M. GlazovL. E. Golub Low-Dimensional Systems Pages: 1209 - 1217
Influence of holmium impurities on photoelectric properties of As2Se3 and (As2S3)0.3(As2Se3)0.7 I. I. BurdiyanE. A. SenokosovR. A. Pynzar’ Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites Pages: 1218 - 1221
Oxidative-gravimetric porosimetry of macroporous silicon A. A. NechitaĭlovE. V. AstrovaS. Yu. Kameneva Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semicronductor Composites Pages: 1222 - 1226
Effect of extreme radiation fluences on parameters of SiC nuclear particle detectors A. M. IvanovA. A. LebedevN. B. Strokan Physics of Semiconductor Devices Pages: 1227 - 1231
Experimental study of temperature dependence of threshold characteristics in semiconductor VCSELs based on submonolayer InGaAs QDs S. A. BlokhinA. V. SakharovJ. Y. Chi Physics of Semiconductor Devices Pages: 1232 - 1236
The Wannier-Stark effects in the 6H-SiC planar junction field-effect transistors with a p-n junction as the gate V. I. SankinP. P. ShkrebiĭA. A. Lebedev Physics of Semiconductor Devices Pages: 1237 - 1241
High-efficiency (49%) and high-power photovoltaic cells based on gallium antimonide V. P. KhvostikovM. G. RastegaevaV. M. Andreev Physics of Semiconductor Devices Pages: 1242 - 1246