Evaluation of high temperature dielectric films for high voltage power electronic applications J. L. SutharJ. R. Laghari Papers Pages: 77 - 81
Reaction sequences in the systems Ti(OiPr)4 + Ba(CH3COO)2 and TiO2 + Ba(CH3COO)2 J. P. GrammaticoJ. M. Porto Lopez Papers Pages: 82 - 86
Effects of the reaction parameters on the deposition characteristics in ZrO2 CVD Joon-Hoo ChoiHo-Gi KimSoon-Gil Yoon Papers Pages: 87 - 92
Relation between thermal conductivity, sintering mechanism and microstructure of AIN with yttrium aluminate grain boundary phases W. E. LeeS. -K. ChiangP. T. B. Shaffer Papers Pages: 93 - 101
Some properties of the first non-aqueous electro-codeposited InP, In and P thin films S. N. Sahu Papers Pages: 102 - 106
Dislocation generation in silicon during CMOS device processing P. J. Halfpenny Papers Pages: 107 - 112
Understanding doped V2O3 as a functional positive temperature coefficient material B. C. HendrixX. WangW. Q. Cui Papers Pages: 113 - 119
Preparation and characterization of superconducting (YBa2Cu3O x -Ag) composites obtained by sol-gel method P. K. PalS. MollaB. K. Chaudhuri Papers Pages: 120 - 123
Temperature dependence of the electrical conductivity of Salicylaldazinate metal chelates B. A. El-SayedM. M. El-DesokyM. B. Sayed Papers Pages: 124 - 126
Possibilities for formation of the 110 K phase 2223 in Sb or V doped Bi-Sr-Ca-Cu-O and Bi-Pb-Sr-Ca-Cu-O materials K. KonstantinovD. KovachevaV. Kovachev Papers Pages: 127 - 131
Use of AgInTe2 for optoelectronic switching at higher frequencies R. ShuklaP. KhuranaK. K. Srivastava Papers Pages: 132 - 137