Determination of damage profiles in semiconductors using differential reflectance M. Gal OriginalPaper Pages: 187 - 193
Optical properties of lead iodide between 0.4946 and 6.185 eV D. S. BhavsarK. B. Saraf OriginalPaper Pages: 195 - 198
Effects of neutron irradiation on SiGe HBT and Si BJT devices Xiang-Ti MengHong-Wei YangPei-Hsin Tsien OriginalPaper Pages: 199 - 203
Microwave dielectric properties of mixed phase ceramics, Ba(Zn1/3Ta2/3)O3–xCaTiO3 and xMgTiO3–yCaTiO3–z(Nd2O3,wTiO2) Takahiro TakadaKeisuke KageyamaSatoshi Takao OriginalPaper Pages: 205 - 214
Combustion synthesis of Eu2+-activated BaMgAl10O17 phosphor Sungbong ParkShinhoo Kang OriginalPaper Pages: 223 - 228
Investigation of the crystal structure and electrical properties of La3+-doped SrBi2Ta2O9 ceramics Jingsong LiuShuren ZhangChengtao Yang OriginalPaper Pages: 229 - 231
Characterization of GaN and In x Ga1−x N films grown by MOCVD and MBE on free-standing GaN templates and quantum well structures K. S. RamaiahD. HuangK. Y. Lee OriginalPaper Pages: 233 - 245
Structural roughness and interface strain properties in Si/SiO2/Poly-Si1−x Ge x tri-layer system with ultrathin oxide L. L. YeA. ThölénM. Willander OriginalPaper Pages: 247 - 254