Journal of Materials Science: Materials in Electronics August 2001 Peter Capper Editorial Introduction Pages: 3 - 3
Bulk Bridgman growth of cadmium mercury telluride for IR applications P. Capper OriginalPaper Pages: 423 - 428
Growth-dependent properties of KTP crystals and PPKTP structures M. RothN. AngertM. Tseitlin OriginalPaper Pages: 429 - 436
Thermal effects limitations in mid-infrared continuous wave optical parametric oscillators J.-J. ZondyA. DouilletS. Lobanov OriginalPaper Pages: 451 - 460
Influence of Bi2O3 in the microstructure of SrBi2Ta2O3 films deposited by pulsed laser ablation M. P. Cruz-JáureguiJ. M. SiqueirosJ. Portelles OriginalPaper Pages: 461 - 465
The behavior of Ti silicidation on Si/SiGe/Si base and its effect on base resistance and fmax in SiGe hetero-junction bipolar transistors Seung-Yun LeeHong-Seung KimMin-Kyu Song OriginalPaper Pages: 467 - 472
Characterization of p-In2Se3 thin films A. F. QasrawiM. ParlakI. Günal OriginalPaper Pages: 473 - 476
Oxygen ion beam assisted etching of single crystal diamond chips using reactive oxygen gas S. KiyoharaK. MoriJ. Taniguchi OriginalPaper Pages: 477 - 481