Abstract
This paper reports the synthesis of a new polyimide (PI) containing a spiropyran moiety in the side chain and its applications to the switchable polymer memory before and after UV exposure. UV exposure allows memory using spiropyran-based PI as an active layer with a higher current and lower switching-ON voltage compared to the unexposed device due to the structural changes in the spiropyran moiety after UV exposure. In addition, this study examined the effects of UV exposure on the performance of the memory containing spiropyran-based PI using the UV-Vis absorption spectra and space-charge limited conduction (SCLC) model.
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Seok, W.C., Son, S.H., An, T.K. et al. Photo-enhanced polymer memory device based on polyimide containing spiropyran. Electron. Mater. Lett. 12, 537–544 (2016). https://doi.org/10.1007/s13391-016-4019-7
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DOI: https://doi.org/10.1007/s13391-016-4019-7