Abstract
We investigated the effect of the electrode on the resistive switching property of (Cu, Zn, Pt)-Cu2S-W structures to clarify the role of metallic ions and electrodes in forming conductive paths in solid-electrolytes and also to improve the switching property. Notably, Zn-Cu2S-W and Pt-Cu2S-W structures that lack of oxidizable metal electrodes exhibited bipolar switching characteristics, and practically preferable switching properties with appropriately higher a turn-ON voltage and resistance were achieved for Zn-Cu2S-W in comparison to Cu-Cu2S-W with too low turn-ON voltage. In contrast, the degrading evolution of switching was observed in Pt-Cu2S-W. A simplified but convincing model is also suggested and discussed to explain the observations.
Article PDF
Similar content being viewed by others
Explore related subjects
Discover the latest articles, news and stories from top researchers in related subjects.Avoid common mistakes on your manuscript.
References
M. N. Kozicki, C. Gopalan, M. Balakrishnan, M. Park, and M. Mitkova, Proc. Symp. on Non-Volatile Memory Technology, p. 10, Florida, U.S.A (2004).
R. Waser, R. Dittmann, G. Staikov, and K. Szot, Adv. Mater. 21, 2632 (2009).
M. N. Kozicki, M. Park, and M. Mitkova, IEEE Trans. Nanotechnol. 4, 331 (2005).
S. J. Choi, J. H. Lee, H. J. Bae, W. Y. Yang, T. W. Kim, and K. H. Kim, IEEE Elec. Dev. Lett. 30, 2 (2009).
Z. Xu, Y. Bando, W. Wang, X. Bai, and D. Golberg, ACS nano 4, 2515 (2010).
M. N. Kozicki, M. Mitkova, M. Park, M. Balakrishnan, and C. Gopalan, Superlattices and Microstructures 34, 459 (2003).
R. Y. Kim, H. G. Kim, and S. G. Yoon, Appl. Phys. Lett. 89, 102107 (2006).
M. N. Kozicki, M. Balakrishan, C. Gopalan, C. Ratnakumar, and M. Mitkova, Proc. Symp. on IEEE Non-Volatile Memory Technology, P. 83, Texas, U.S.A(2005).
Z. Wang, P. B. Griffin, J. McVittie, S. Wong, P. C. McIntyre, and Y. Nishi, IEEE Elec. Dev. Lett. 28, 14 (2007).
T. Sakamoto, H. Sunamura, H. Kawaura, T. Hasegawa, T. Nakayama, and M. Aono, Appl. Phys. Lett. 82, 3032 (2003).
N. Banno, T. Sakamoto, T. Hasegawa, K. Terabe, and M. Aono, Jpn. J. Appl. Phys. 45, 3666 (2006).
N. Banno, T. Sakamoto, N. Iguchi, H. Sunamura, K. Terabe, T. Hasegawa, and M. Aono, IEEE Trans. Elec. Dev. 55, 3283 (2008).
M. Kundu, T. Hasegawa, K. Terabe, and M. Aono, J. Appl. Phys. 103, 073523 (2008).
W. Y. Yang and S. W. Rhee, Appl. Phys. Lett. 91, 232907 (2007).
S. J. Choi, G. S. Park, K. H. Kim, S. Cho, W. Y. Yang, X. S. Li, J. H. Moon, K. J. Kim, and K. N. Kim, Adv. Mat. 23, 3272 (2011).
Y. Han, H. V. Huynh, and G. K. Tan, Organometallics 26, 4612 (2007).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Choi, SJ., Yang, W.Y., Kim, K.H. et al. Resistive switching property of copper sulfide and its dependence on electrode. Electron. Mater. Lett. 7, 313–317 (2011). https://doi.org/10.1007/s13391-011-0190-z
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s13391-011-0190-z