Abstract
Radio Frequency Magnetron Sputtering Technique has been employed to prepare metal oxide thin film of ZnO and CdO. The films were deposited in such condition that some point defects like oxygen vacancies have been intentionally incorporated. The defects appeared with significant modification in the properties of the thin films. The prepared films were characterized by studying with X-ray diffraction study, X-ray photoelectron spectroscopic measurement, optical transmittance measurement, and electrical study. The electrical properties are found to change profoundly with the defect concentration. Consequently the optical properties also have been changed.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
Y C Zhao and Li-Bo Yuan J. Phys. D: Appl. Phys. 42 015403. (2009)
I G Kuleyev, I I Kuleyev and I Yu Arapova J. Phys. Condens. Matter 19 406216 (2007)
K L Chopra Thin Film Phenomena (New York: Mc Graw-Hill) p.23 (Chapter 2) (1969)
JCPDS Powder Diffraction File Card 5-0640
E Burstein Phys. Rev. 93 632 (1954)
T S Moss Proc. Phys. Soc. Lond. B67 775 (1954)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Saha, B., Thapa, R., Das, N.S. et al. Intentionally incorporated defect and its consequences in oxide thin film through Radio Frequency Magnetron Sputtering Technique. Indian J Phys 84, 681–685 (2010). https://doi.org/10.1007/s12648-010-0071-6
Published:
Issue Date:
DOI: https://doi.org/10.1007/s12648-010-0071-6