Abstract
SiO2x:ZnO: (1-x)TiO2 nanocrystallites were made via sol-gel route, and co-firing at a lower temperature (600oC). The synthesized nanocrystallites were characterized using several analytical techniques including XRD, SEM/TEM, FT IR, THz, and UV–visible spectroscopy analysis. The results appear that the silicate phase was used to promote the density of the nanocrystalline ceramic during calcination. The lower temperature calcined (∼600oC) nanocrystallites consist of ZnTiO3, Zn2SiO4, and TiO2 phases, with ZnTiO3 dominant rhombohedral phase, showing various electronic transitions. The obvious electronic properties give 2.8 eV as indirect bandgap transition and 3.35 ± 0.01 eV as direct bandgap transition with the increase of silica content. The dielectric constant is in the range 8 at a frequency higher than 104 Hz due to the formation of Zn2SiO4, and the ac conductivity is in the range 10− 10 to 10− 7 S/cm.
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The work was not financially supported, and the National Research Centre of Egypt facilitates the work and the characterization tools.
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Amany Mohamed El Nahrawy: Conceived and designed the experiments; Analyzed and interpreted the data; Contributed reagents, materials, analysis tools, or data; Wrote the paper. A.M. Mansour, Ali B. Abou Hammad & Ahmed M. Bakr: Analyzed and interpreted the data; Contributed reagents, materials, analysis tools, or data; Wrote the paper. Funding Authors declare that this article has not any supported and the authors completely supported their article.
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Mansour, A.M., Abou Hammad, A.B., Bakr, A.M. et al. Silica Zinc Titanate Wide Bandgap Semiconductor Nanocrystallites: Synthesis and Characterization. Silicon 14, 11715–11729 (2022). https://doi.org/10.1007/s12633-022-01886-2
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DOI: https://doi.org/10.1007/s12633-022-01886-2