Abstract
Silicon carbonitride (SiCN) thin film has been deposited over the p-type c-Si (100) substrate by thermal chemical vapor deposition (CVD) process in the nitrogen (N2) gas atmosphere under different deposition temperatures. The scanning electron microscopy (SEM) images have confirmed the presence of randomly distributed agglomerated particles of different sizes over the surface. The atomic force microscopy (AFM) analysis reveals consecutive reduction of particle size with higher deposition temperature whereas particle distribution density increases with higher temperature due to the increased randomness of gaseous molecules within the chamber. The x-ray diffraction (XRD) analysis reveals the presence of peaks at (110), (200), (201), (102) and (400) crystal planes with reduced crystallite size with higher temperatures. The Fourier transform infrared radiation (FTIR) analysis indicates the intensity of Si–N-Si functional group is higher compared to others due to the presence of higher nitrogen content in the film and these results are in good agreement with the results obtained from energy dispersive X-Ray spectroscopy (EDS) analysis. The Photoluminescence (PL) spectra analysis indicates that the blue shift of wavelength is a function of laser power. The estimation of mechanical properties reveals the maximum hardness (H) and Young’s modulus (E) of SiCN coating are 27.89 and 302.30 GPa respectively obtained for the film deposited at 950 °C. The data analysis of SiCN thin film coating has been done by using Origin 9.0 software.
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Soham Das: Conceptualization, Methodology, Software, Writing, Dhruva Kumar: Writing, Methodology, Reviewing, Supervision Rishikesh Borah: Writing, Data Curation, Methodology, Abhinov Dutta: Writing, Data Curation, Methodology, Spandan Guha: Writing, Visualization, Investigation, Editing.
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Das, S., Kumar, D., Borah, R. et al. Impact of elevated temperature over different properties of CVD SiCN coating developed in Nitrogen gas atmosphere. Silicon 14, 9643–9657 (2022). https://doi.org/10.1007/s12633-021-01631-1
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DOI: https://doi.org/10.1007/s12633-021-01631-1