Abstract
In nanoregime, heterojunction diodes have efficient applications in design and fabrication of sensors. Heterojunction diodes are formed by fusing two dissimilar semiconductors. Based on the combination of the materials used, these heterostructures find applications in bioelectronics and miniaturized sensors. In the literature, many different combinations are prevailing –GaN/AlGaN, Au/ZnO, NiO/ZnO. In this paper, a heterojunction diode is designed using Si/ ZnO combination and for the first time,the device is discovered to be used as pressure sensors.. The IV characteristics, energy band profile and CV curves of Si/ZnO is studied, analyzed and validated using TCAD-ATLAS software. This paper also proves that the performance of the device fits well for pressure sensing applications using COMSOL software.
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Acknowledgements
This project has been funded by Science and Engineering Research Board (SERB) under the scheme “Teachers Associateship for Research Excellence” (TARE) with reference no. TAR/2018/000989 and its gratefully acknowledged.
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This project has been funded by Science and Engineering Research Board (SERB) under the scheme Teachers Associateship for Research Excellence (TARE) with Reference no. TAR/2018/000989 (file attached).
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Dhanaselvam, P.S., Kumar, D.S., Ramakrishnan, V.N. et al. Pressure Sensors Using Si/ZnO Heterojunction Diode. Silicon 14, 4121–4127 (2022). https://doi.org/10.1007/s12633-021-01177-2
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DOI: https://doi.org/10.1007/s12633-021-01177-2