Abstract
GaN nanowires have been grown by molecular beam epitaxy either catalyst-free or catalyst-induced by means of Ni seeds. Under identical growth conditions of temperature and V/III ratio, both types of GaN nanowires are of wurtzite structure elongated in the Ga-polar direction and are constricted by M-plane facets. However, the catalyst-induced nanowires contain many more basal-plane stacking faults and their photoluminescence is weaker. These differences can be explained as effects of the catalyst Ni seeds.
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Lieber, C. M.; Wang Z. L. Functional nanowires. MRS Bull. 2007, 32, 99–108.
Wagner, R. S.; Ellis W. C. Vapor-liquid-solid mechanism of single crystal growth. Appl. Phys. Lett. 1964, 4, 89–90.
Kamins, T. I.; Williams, R. S.; Basile, D. P.; Hesjedal, T.; Harris, J. S. Ti-catalyzed Si nanowires by chemical vapor deposition: Microscopy and growth mechanisms. J. Appl. Phys. 2001, 89, 1008–1016.
Persson, A. I.; Larsson, M. W.; Stenstrom, S.; Ohlsson, B. J.; Samuelson, L.; Wallenberg, L. R. Solid-phase diffusion mechanism for GaAs nanowire growth. Nat. Mater. 2004, 3, 677–681.
Putnam, M. C.; Filler, M. A.; Kayes, B. M.; Kelzenberg, M. D.; Guan, Y.; Lewis, N. S.; Eiler, J. M.; Atwater, H. A. Secondary ion mass spectrometry of vapor.liquid.solid grown, Au-catalyzed, Si wires. Nano Lett. 2008, 8, 3109–3113.
Oh, S. H.; Benthem, K. V.; Molina, S. I.; Borisevich, A. Y.; Luo, W.; Werner, P.; Zakharov, N. D.; Kumar, D.; Pantelides, S. T.; Pennycook, S. J. Point defect configurations of supersaturated Au atoms inside Si nanowires. Nano Lett. 2008, 8, 1016–1019.
Allen, J. E.; Hemesath, E. R.; Perea, D. E.; Lensch-Falk, J. L.; Li, Z. Y.; Yin, F.; Gass, M. H.; Wang, P.; Bleloch, A. L.; Palmer, R. E.; Lauhon, L. J. High-resolution detection of Au catalyst atoms in Si nanowires. Nat. Nanotechnol. 2008, 3, 168–173.
Zhang, R. Q.; Lifshitz, Y.; Lee, S. T. Oxide-assisted growth of semiconducting nanowires. Adv. Mater. 2003, 15, 635–640.
Noborisaka, J; Motohisa, J; Fukui, T. Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapourphase epitaxy. Appl. Phys. Lett. 2005, 86, 213102.
Mohammad, S. N. Self-catalysis: A contamination-free, substrate-free growth mechanism for single-crystal nanowire and nanotube growth by chemical vapor deposition. J. Chem. Phys. 2006, 125, 094705.
Mandl, B.; Stangl, J.; Mårtensson, T.; Mikkelsen, A.; Eriksson, J.; Karlsson, L. S.; Bauer, G.; Samuelson, L.; Seifert, W. Au-free epitaxial growth of InAs nanowires. Nano Lett. 2006, 6, 1817–1821.
Kim, B. S.; Koo, T. W.; Lee, J. H.; Kim, D. S.; Jung, Y. C.; Hwang, S. W.; Choi, B. L.; Lee, E. K.; Kim, J. M.; Whang, D. Catalyst-free growth of single-crystal silicon and germanium nanowires. Nano Lett. 2009, 9, 864–869.
Kuykendall, T.; Ulrich, P.; Aloni, S.; Yang, P. Complete composition tunability of InGaN nanowires using a combinatorial approach. Nat. Mater. 2007, 6, 951–956.
Geelhaar, L.; Chèze, C.; Weber, W. M.; Averbeck, R.; Riechert, H.; Kehagias, T.; Komninou, P.; Dimitrakopulos, G. P.; Karakostas, T. Axial and radial growth of Ni-induced GaN nanowires. Appl. Phys. Lett. 2007, 91, 093113.
Chèze, C. Investigation and comparison of GaN nanowire nucleation and growth by the catalyst-assisted and selfinduced approach. Ph.D. Dissertation, Humboldt-Universität zu Berlin, Germany, 2010.
Yoshizawa, M.; Kikuchi, A.; Mori, M.; Fujita, N.; Kishino, K. Growth of self-organized GaN nanostructures on Al2O3(0001) by RF-radical source molecular beam epitaxy. Jpn. J. Appl. Phys. 1997, 36, L459–L462.
Calleja, E.; Ristić, J.; Fernández-Garrido, S.; Cerutti, L.; Sánchez-García, M. A.; Grandal, J.; Trampert, A.; Jahn, U.; Sánchez, G.; Griol, A.; Sánchez, B. Growth, morphology, and structural properties of group-III-nitride nanocolumns and nanodisks. Phys. Status Solidi B 2007, 244, 2816–3837.
Debnath, R. K.; Meijers, R.; Richter, T.; Stoica, T.; Calarco, R.; Lüth, H. Mechanism of molecular beam epitaxy growth of GaN nanowires on Si(111). Appl. Phys. Lett. 2007, 90, 123117.
Calarco, R.; Meijers, R. J.; Debnath, R. K.; Stoica, T.; Sutter, E.; Lüth, H. Nucleation and growth of GaN nanowires on Si(111) performed by molecular beam epitaxy. Nano Lett. 2007, 7, 2248–2251.
Kehagias, T.; Komninou, P.; Dimitrakopulos, G. P.; Cheze, C.; Geelhaar, L.; Riechert, H.; Karakostas, T. Atomic-scale configuration of catalyst particles on GaN nanowires. Phys. Status Solidi C 2008, 5, 3716–3719.
Furtmayr, F.; Vielemeyer, M.; Stutzmann, M.; Arbiol, J.; Estradé, S.; Peirò, F.; Morante, J. R.; Eickhoff, M. Nucleation and growth of GaN nanorods on Si(111) surfaces by plasma-assisted molecular beam epitaxy—The influence of Si- and Mg-doping. J. Appl. Phys. 2008, 104, 034309.
Qian, F.; Li, Y.; Gradečak, S.; Park, H. G.; Dong, Y.; Ding, Y.; Wang, Z. L.; Lieber, C. M. Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers. Nat. Mater. 2008, 7, 701–706.
Kuykendall, T.; Pauzaukie, P. J.; Zhang, Y. F.; Goldberger, J.; Sirbuly, D.; Denlinger, J.; Yang, P. D. Crystallographic alignment of high-density gallium nitride nanowire arrays. Nat. Mater. 2004, 3, 524–528.
Chin, A. H.; Ahn, T. S.; Li. H; Vaddiraju. S; Bardeen, C. J.; Ning, C. Z.; Sunkara, M. K. Photoluminescence of GaN nanowires of different crystallographic orientations. Nano Lett. 2007, 7, 626–631.
Cherns, D.; Meshi, L.; Griffiths, I.; Khongphetsak, S.; Novikov, S. V.; Farley, N.; Campion, R. P.; Foxon, C. T. Defect reduction in GaN/(0001) sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers. Appl. Phys. Lett. 2008, 92, 121902.
Smith, A. R.; Feenstra, R. M.; Greve, D. W.; Neugebauer, J.; Northrup, J. E. Reconstructions of the GaN\( (000\bar 1) \) surface. Phys. Rev. Lett. 1997, 79, 3934–3937.
Yoshikawa, A.; Xu, K. Polarity selection process and polarity manipulation of GaN in MOVPE and RF-MBE growth. Thin Solid Films 2002, 412, 38–43.
Georgakilas, A.; Mikroulis, S.; Cimalla, V.; Zervos, M.; Kostopoulos, A.; Komninou, P.; Kehagias, T.; Karakostas, T. Effects of the sapphire nitridation on the polarity and structural properties of GaN layers grown by plasma-assisted MBE. Phys. Status Solidi A 2001, 188, 567–570.
Lari, L.; Murray, R. T.; Bullough, T. J.; Chalker, P. R.; Gass, M.; Chèze, C.; Geelhaar, L.; Riechert, H. Defect characterization and analysis of III–V nanowires grown by Ni-promoted MBE. Phys. Status Solidi A 2008, 205, 2589–2592.
Zhao, Y.; Tu, W.; Bae, I. T.; Seong, T. Y. Growth of cubic GaN by phosphorus-mediated molecular beam epitaxy. Appl. Phys. Lett. 1999, 74, 3182–3184.
Chisholm, J. A.; Bristowe, P. D. Ab initio study of the effect of doping on stacking faults in GaN. J. Cryst. Growth 2001, 230, 432–437.
Cimpoiasu, E.; Stern, E.; Klie, R.; Munden, R. A.; Cheng, G.; Reed, M. A. The effect of Mg doping on GaN nanowires. Nanotechnology 2006, 17, 5735–5739.
Arbiol, J.; Estradé, S.; Prades, J. D.; Cirera, A.; Furtmayr, F.; Stark, C.; Laufer, A.; Stutzmann, M.; Eickhoff, M.; Gass, M. H., et al. Triple-twin domains in Mg doped GaN wurtzite nanowires: Structural and electronic properties of this zinc-blende-like stacking. Nanotechnology 2009, 20, 145704.
Glas, F.; Harmand, J. C.; Patriarche, G. Why does wurtzite form in nanowires of III–V zinc-blende semiconductors? Phys. Rev. Lett. 2007, 99, 146101.
Tarsa, E. J.; Heying, B.; Wu, X. H.; Fini, P.; DenBaars, S. P.; Speck, J. S. Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy. J. Appl. Phys. 1997, 82, 5472–5479.
Zywietz, T.; Neugebauer, J.; Scheffler, M. Adatom diffusion at GaN (0001) and \( (000\bar 1) \) surfaces. Appl. Phys. Lett. 1998, 73, 487–489.
Shi, B. M.; Xie, M. H.; Wu, H. S.; Wang, N.; Tong, S. Y. Transition between wurtzite and zinc-blende GaN: An effect of deposition condition of molecular-beam epitaxy. App. Phys. Lett. 2006, 89, 151921.
Robins, L. H., Bertness, K. A., Barker, J. M., Sanford, N. A.; Schlager, J. B. Optical and structural study of GaN nanowires grown by catalyst-free molecular beam epitaxy. I. Near-band-edge luminescence and strain effects. J. Appl. Phys. 2007, 101, 113505 and references therein.
Liu, R.; Bell, A.; Ponce, F. A.; Chen, C. Q.; Yang, J. W.; Kahn, M. A. Luminescence from stacking faults in gallium nitride. Appl. Phys. Lett. 2005, 86, 021908.
Paskov, P. P.; Schifano, R.; Monemar, B.; Paskova, T.; Figge, S.; Hommel, D. Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition. J. Appl. Phys. 2005, 98, 093519.
Salviati, G.; Albrecht, M.; Zanotti-Fregonara, C.; Armani, N.; Mayer, M.; Shreter, Y.; Guzzi, M.; Melnik, Y.; Vvassilevski, K.; Dmitriev, V. A.; Strunk, H. P. Cathodoluminescence and transmission electron microscopy study of the influence of crystal defects on optical transitions in GaN. Phys. Status Solidi A 1999, 171, 325–339.
Calleja, E.; Sánchez-García, M. A.; Sánchez, F. J.; Calle, F.; Naranjo, F. B.; Muñoz, E.; Jahn, U.; Ploog, K. Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy. Phys. Rev. B 2000, 62, 16826–16834.
Furtmayr, F.; Vielemeyer, M.; Stutzmann, M.; Laufer, A.; Meyer, B. K.; Eickhoff, M. Optical properties of Si- and Mg-doped gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy. J. Appl. Phys. 2008, 104, 074309.
Yoo, J.; Hong, Y. J.; An, S. J.; Yi, G. C.; Chon, B.; Joo, T.; Kim, J. W.; Lee, J. S. Photoluminescent characteristics of Ni-catalyzed GaN nanowires. Appl. Phys. Lett. 2006, 89, 043124.
Corfdir, P.; Lefebvre, P.; Ristić, J.; Valvin, P.; Calleja, E.; Trampert, A.; Ganière, J. D.; Deveaud-Plédran, B. Time-resolved spectroscopy on GaN nanocolumns grown by plasma assisted molecular beam epitaxy on Si substrates. J. Appl. Phys. 2009, 105, 013113.
Brandt, O.; Yang, B.; Wunsche, H. J.; Jahn, U.; Ringling, J.; Paris, G.; Grahn, H. T.; Ploog, K. H. Impact of exciton diffusion on the optical properties of thin GaN layers. Phys. Rev. B 1998, 58, R13407–R13410.
Azize, M.; Leroux, M.; Laugt, M.; Gibart, P.; Bougrioua, Z. Strain and microstructure in Fe-doped GaN layers grown by low pressure metalorganic vapour phase epitaxy. Phys. Status Solidi A 2006, 203, 1744–1748.
Aggerstam, T.; Pinos, A.; Marcinkevicius, S.; Linnarsson, M.; Lourdudoss, S. Electron and hole capture cross-sections of Fe acceptors in GaN:Fe epitaxially grown on sapphire. J. Electron. Mater. 2007, 36, 1621–1624.
Lari, L.; Murray, R. T.; Bullough, T. J.; Chalker, P. R.; Gass, M. H.; Chèze, C.; Geelhaar, L.; Riechert, H. Electron microscopy analysis of AlGaN/GaN nanowires grown by catalyst-assisted molecular beam epitaxy. In Microscopy of Semiconducting Materials 2007: Proceedings of the 15th Conference, 2–5 April 2007, Cambridge, UK; Cullis A. G; Midgley, P. A., Eds; Springer & Canopus Publishing Limited 2007, pp. 221–224.
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Chèze, C., Geelhaar, L., Brandt, O. et al. Direct comparison of catalyst-free and catalyst-induced GaN nanowires. Nano Res. 3, 528–536 (2010). https://doi.org/10.1007/s12274-010-0013-9
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DOI: https://doi.org/10.1007/s12274-010-0013-9