Abstract
Low resistance Pt and W ohmic metallizations to p-type 6H-SiC, using focused ion beam (FIB) surface-modification and in-situ direct-write metal deposition without annealing, are reported. FIB (Ga) surface-modification and in-situ deposition of Pt, and W showed minimum contact resistance values of 2.8 × 10−4 ohm-cm2 to 2.5 × 10−4 ohm-cm2, respectively. A comparison with ex-situ pulse laser deposited Pt on surface-modified areas showed comparable contact resistance values and similar behavior. Auger and secondary ion mass spectroscopy analysis showed a significant (∼4% a.c.) incorporation of Ga within a 15 nm distance from the SiC surface with surface-modification. Atomic force micros-copy studies showed that surface-modification process smooths out the SiC surface significantly.
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Iliadis, A.A., Andronescu, S.N., Yang, W. et al. Pt and W ohmic contacts to p-6H-SiC by focused ion beam direct-write deposition. J. Electron. Mater. 28, 136–140 (1999). https://doi.org/10.1007/s11664-999-0002-5
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DOI: https://doi.org/10.1007/s11664-999-0002-5